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				Analog Devices, Inc. AD[Analog Devices] http://
Part No.	ADXL202 ADXL202AQC ADXL202JQC ADXL210 ADXL210AQC ADXL210JQC ADXL210JQC-1
OCR Text	...p Max 1.5 2 0.2 1 0.01 2 12.5 312 0.5 50 2 1.0 2.0 500 500 5 10 15 1000 10 125 M/RSET 0.7 VS - 200 mV 35 200 3.0 4.75 5.25 5.25 1.0 15 ...Output Short Circuit Duration (Any Pin to Common) . . . . . . . . . . . . . . . . . . . . . . Indefi...
Description	Low Cost 62 g/610 g Dual Axis Accelerometers with Digital Output(124.95 k) Circular Connector; No. of Contacts:26; Series:LJTPQ00R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle Low Cost -2 g/ -10 g Dual Axis iMEMS Accelerometers with Digital Output
File Size	124.81K / 11 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
Part No.	APT5010B2VFR
OCR Text	...YP MAX UNIT pF 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drain ("Mill...OUTPUT CHARACTERISTICS 0 20 4.5V 4V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3...
Description	POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	64.50K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technolo...
Part No.	APT5010B2VR APT5010B2VRG
OCR Text	...N TYP MAX UNIT 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-Drain ("M...OUTPUT CHARACTERISTICS 0 20 4.5V 4V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3...
Description	POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. New T-MAX?Package (Clip-mounted TO-247 Package)
File Size	61.66K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	...YP MAX UNIT pF 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drain ("Mill...OUTPUT CHARACTERISTICS 0 20 4.5V 4V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	...N TYP MAX UNIT 7410 1050 390 312 37 127 18 16 54 5 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise ...OUTPUT CHARACTERISTICS 0 20 4.5V 4V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	...N TYP MAX UNIT 7410 1050 390 312 37 127 18 16 54 5 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise ...OUTPUT CHARACTERISTICS 0 20 4.5V 4V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	...N TYP MAX UNIT 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-Drain ("M...OUTPUT CHARACTERISTICS 0 20 4.5V 4V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5010LVFR APT20M22LVFR
OCR Text	...YP MAX UNIT pF 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drain ("Mill...OUTPUT CHARACTERISTICS 0 20 4.5V 4V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 47A 0.100 Ohm
File Size	66.12K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5010LVR
OCR Text	...N TYP MAX UNIT 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-Drain ("M...OUTPUT CHARACTERISTICS 0 20 4.5V 4V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 47A 0.100 Ohm
File Size	64.27K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5012 APT5012WVR
OCR Text	...N TYP MAX UNIT 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-Drain ("M...OUTPUT CHARACTERISTICS 0 20 4.5V 4V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3...
Description	POWER MOS V 500V 40A 0.120 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.40K / 4 Page	View it Online	Download Datasheet

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