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United Monolithic Semic...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
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| Part No. |
CHA2294-99F_00 CHA2294 CHA2294-99F/00
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| OCR Text |
35-40ghz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC Description
The CHA2294 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military t... |
| Description |
35-40ghz Low Noise, Variable Gain Amplifier
35-40ghz Low Noise, Variable Gain Amplifier 35 - 40GHz的低噪声，可变增益放大器
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| File Size |
122.05K /
6 Page |
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United Monolithic Semic...
UMS[United Monolithic Semiconductors]
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| Part No. |
CHA5292A-99F_00 CHA5292A CHA5292A-99F/00
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| OCR Text |
...4 -8 -12 -16 -20 30 31 32 33 34 35 36 Frequency (GHz) 37 38 39 40
S21 (dB) S11 (dB) S22 (dB)
Main Characteristics
Tamb. = 25C Symbol
F...40GHz Medium Power Amplifier
Parameter
Operating frequency range (1) Small signal gain (1) Small... |
| Description |
37-40GHz Medium Power Amplifier
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| File Size |
128.56K /
6 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FMM5704X
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| OCR Text |
...6
15
4 1 0
10
30 30 35 Frequency (GHz) 40 45
32
34
36
38
40
Frequency (GHz)
OUTPUT POWER vs. INPUT POWER
1...40GHz LNA MMIC S-PARAMETERS VDD = 3V, IDS = 20mA FREQUENCY S11 (MHZ) MAG ANG
16000 16500 17000 1750... |
| Description |
36-40GHz LNA MMIC
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| File Size |
1,253.42K /
4 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LMA406
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| OCR Text |
...e. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended. Ultrasonic bonding is not recommended. * The recommended die attach is Ablebond silver epoxy, the stabilize bake... |
| Description |
LOW NOISE PHEMT MMIC
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| File Size |
158.96K /
5 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LMA421
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| OCR Text |
...e. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended. Ultrasonic bonding is not recommended. The recommended die attach is Ablebond silver epoxy, the stabilize bake t... |
| Description |
LOW NOISE PHEMT MMIC
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| File Size |
128.45K /
4 Page |
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it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5512BLQ LX5512B LX5512BLQTR
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| OCR Text |
...0 BSC 1.30 1.55 1.30 1.55 0.2 0.35 0.50 INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.051 0.061 0.051 0.061 0.008 0.012 0.020
K L
A
MECHANICALS MECHANICALS
Copyright (c) 2004 Rev. 1.0, ... |
| Description |
InGaP HBT 2.4 2.5 GHz Power Amplifier
InGaP HBT 2.4-2.5 GHz power amplifier.
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
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| File Size |
173.40K /
6 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
MGFC5214 C5214A
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| OCR Text |
... 30 20 10 GAIN 0 -10 -20 -30 30 35 40 45 50 S22 S11
Measured
Id1=180mA Id2=340mA
Frequency (GHz)
Output Power Performances 30 f=40GHz Measured 20 Id1=180mA Id2=340mA 20 30
10
10
0 -10
0 0 Pin (dBm) 10 20
MITSUBISH... |
| Description |
From old datasheet system
Q-Band 2-Stage Power Amplifier
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| File Size |
33.38K /
4 Page |
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it Online |
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Price and Availability
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