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Integrated Device Technology, Inc.
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| Part No. |
IDT71V25761 IDT71V25781 IDT71V25781S166PF IDT71V25781S166PFI IDT71V25761S166PF IDT71V25761S166PFI IDT71V25761S166BQI IDT71V25761S200PF IDT71V25761S183BQI IDT71V25761S200BG IDT71V25761S200BGI
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| Description |
128k x 36, 256K x 18 3.3V Synchronous sraMs 2.5V I/O, pipelined Outputs, Burst Counter, Single Cycle Deselect 128k x 36 CACHE sraM, 3.5 ns, PBGA165
128k x 36, 256K x 18 3.3V Synchronous sraMs 2.5V I/O, pipelined Outputs, Burst Counter, Single Cycle Deselect 128k x 36 CACHE sraM, 3.1 ns, PQFP100
128k x 36, 256K x 18 3.3V Synchronous sraMs 2.5V I/O, pipelined Outputs, Burst Counter, Single Cycle Deselect 128k x 36 CACHE sraM, 3.3 ns, PBGA165
128k x 36, 256K x 18 3.3V Synchronous sraMs 2.5V I/O, pipelined Outputs, Burst Counter, Single Cycle Deselect 128k x 36 CACHE sraM, 3.1 ns, PBGA119
128k x 36, 256K x 18 3.3V Synchronous sraMs 2.5V I/O, pipelined Outputs, Burst Counter, Single Cycle Deselect 128k的米656 × 18 3.3同步sraM.5VI / O的流水线输出，脉冲计数器，单周期取消
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| File Size |
519.53K /
23 Page |
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Cypress Semiconductor Corp.
sraM
Cypress Semiconductor, Corp.
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| Part No. |
CY7C1470V25 CY7C1470V25-167ACES CY7C1470V25-167AxC CY7C1470V25-167AxCES CY7C1470V25-167BZC CY7C1470V25-167BZCES CY7C1470V25-167BZxC CY7C1470V25-200ACES CY7C1470V25-200AxC CY7C1470V25-200AxCES CY7C1470V25-200BZC CY7C1470V25-200BZCES CY7C1470V25-200BZxC CY7C1470V25-250AxC CY7C1470V25-250BZC CY7C1470V25-250BZxC CY7C1472V25-250AxC CY7C1472V25-250BZxC CY7C1474V25-250BGxC CY7C1472V25-250BZC CY7C1474V25-250BGC CY7C1474V25-167BGCES CY7C1472V25-167BZCES CY7C1472V25-200ACES CY7C1472V25-200AxCES CY7C1472V25-200BZCES CY7C1472V25-167AxCES CY7C1474V25-200BGxC CY7C1474V25-200BGCES CY7C1472V25 CY7C1472V25-167AxC CY7C1472V25-167BZxC CY7C1472V25-200BZxC CY7C1474V25-200BGC
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| Description |
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined sraM with NoBL?/a> Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined sraM with NoBL Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined sraM with NoBL(TM) Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined sraM with NoBLArchitecture 4M x 18 ZBT sraM, 3.4 ns, PQFP100
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined sraM with NoBLArchitecture 4M x 18 ZBT sraM, 3.4 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined sraM with NoBLArchitecture 4M x 18 ZBT sraM, 3 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined sraM with NoBLArchitecture 1M x 72 ZBT sraM, 3 ns, PBGA209
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 2M x 36 ZBT sraM, 3.4 ns, PBGA165
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| File Size |
382.31K /
27 Page |
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MOTOROLA INC
NEC, Corp.
Motorola Mobility Holdings, Inc.
Motorola, Inc.
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| Part No. |
MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R MCM63P818TQ100R MCM63P818ZP100R MCM63P818ZP66 MCM63P818ZP66R
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| Description |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2
128k x 36 and 256K x 18 Bit pipelined BurstRAM Synchronous Fast Static RAM 256K x 18 CACHE sraM, 5 ns, PQFP100
128k x 36 and 256K x 18 Bit pipelined BurstRAM Synchronous Fast Static RAM 128k x 36 CACHE sraM, 4 ns, PBGA119
128k x 36 and 256K x 18 Bit pipelined BurstRAM Synchronous Fast Static RAM 128k x 36 CACHE sraM, 5 ns, PQFP100
Replaced by PTH12000W :
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| File Size |
320.35K /
20 Page |
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http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
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| Part No. |
E28F002Bx-B80 E28F002Bx-T60 E28F002Bx-T80 E28F002Bx-B120 E28F002Bx-T120 E28F002Bx-B60 28F200Bx-TB E28F200Bx-B80 TB28F200Bx-B80 TE28F002Bx-B80 TE28F200Bx-B80 PA28F200Bx-B80 E28F200Bx-B60 E28F200Bx-T80 TE28F002Bx-T80 TB28F200Bx-T80 TE28F200Bx-T80 PA28F200Bx-T80 E28F200Bx-B120 PA28F200Bx-B120 PA28F200Bx-B60 E28F200Bx-T120 PA28F200Bx-T60 E28F200Bx-T60 PA28F200Bx-T120
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| Description |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200Bx - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002Bx-B - 2-MBIT (128k x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128k x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128k x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128k x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
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| File Size |
575.71K /
48 Page |
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it Online |
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Integrated Silicon Solution, Inc.
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| Part No. |
IS61SP12836
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| Description |
128k x 36 Synchronous pipelined sraM(128k x 36 同步流水线静态RAM) 128k的同步流水线× 36的sraM28K的36同步流水线静态内存）
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| File Size |
127.18K /
15 Page |
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Price and Availability
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