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  400 600 800 1200v Datasheet PDF File

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    BSM100GB120DN2K 100B12K2 C67070-A2107-A70

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. BSM100GB120DN2K 100B12K2 C67070-A2107-A70
OCR Text ...mitter leakage current IGES 400 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 54 6.5 1 0.5 - S nF - ...600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Rise time tr 80 160 VCC = 600 V, VGE = 15 V, IC = ...
Description From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

File Size 113.27K  /  9 Page

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    BSM100GB120DN2 100B12N2 C67076-A2107-A70

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. BSM100GB120DN2 100B12N2 C67076-A2107-A70
OCR Text ...Turn-off delay time td(off) 400 600 VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Fall time tf 70 100 VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Free-Wheel Diode Diode forward voltage VF 2.3 1.8 2.8 - V ...
Description From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

File Size 131.39K  /  9 Page

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    MAX4120 MAX4120EEE MAX4120ESD MAX4112 MAX4112ESA MAX4112EUA MAX4113 MAX4113ESA MAX4117 MAX4117ESA MAX4118 MAX4118ESA MAX

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
Part No. MAX4120 MAX4120EEE MAX4120ESD MAX4112 MAX4112ESA MAX4112EUA MAX4113 MAX4113ESA MAX4117 MAX4117ESA MAX4118 MAX4118ESA MAX4119 MAX4119EEE MAX4119ESD
OCR Text ...5 60 250 50 80 500 5 3.8 3.5 80 400 270 300 MHz 6.5 9 14 2.5 pA/Hz V dB dB k mA V mA CONDITIONS MIN TYP 1 10 3.5 3.5 500 30 2.2 27 13 pA/Hz ...600 VOUT = 2Vp-p 0.1 1 10 FREQUENCY (MHz) 100 1000 MAX4112/4113-02 4 3 NORMALIZED GAIN (dB) 2 1 ...
Description " Dual 500MHz, Low-Power, Current-Mode Feedback Amplifier"
" Quad, 270MHz, Low-Power, Current Feedback Amplifier"
Single/Dual/Quad / 400MHz / Low-Power / Current Feedback Amplifiers
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers OP-AMP, 8000 uV OFFSET-MAX, PDSO8

File Size 166.25K  /  12 Page

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    PA89 PA89A

ETC
Part No. PA89 PA89A
OCR Text ...80 -225 -270 .95 .9 0 200 400 600 800 1000 1200 TOTAL SUPPLY VOLTAGE, VS (V) 25 50 75 100 125 150 CASE TEMPERATURE, T (C) 120 OPEN LOOP GAIN, A (dB) SMALL SIGNAL RESPONSE 15pf, 220 33pf, 220 VOLTAGE DROP FROM SUPPLY, V...
Description HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS

File Size 69.05K  /  4 Page

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    MSS50-800 MSS40 MSS40-1200 MSS40-800 MSS50-1200 MSS50

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. MSS50-800 MSS40 MSS40-1200 MSS40-800 MSS50-1200 MSS50
OCR Text ...125C Tj = 125C Tj = 125C 55 420 400 800 50 4 1 - 40 to + 150 - 40 to + 125 5 70 630 600 1800 Value MSS50 A A A2S A/s A W C V 1/5 Unit ISOTOP is a registred trademark of STMicroelectronics September 2000 - Ed: 3 MSS40 / 50 Series E...
Description (MSS40 / MSS50) BACK TO BACK SCR MODULE
BACK TO BACK SCR MODULE

File Size 149.10K  /  5 Page

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    16FR120 16FR100 16F60 16F100 16F8 A16FR60M A16F10 A16F100 A16F100M A16F10M A16F120 A16F120M A16F20 A16F20M A16F40 A16F40

IRF[International Rectifier]
Part No. 16FR120 16FR100 16F60 16F100 16F8 A16FR60M A16F10 A16F100 A16F100M A16F10M A16F120 A16F120M A16F20 A16F20M A16F40 A16F40M A16F60 A16F60M A16FR10 A16FR100 A16FR100M A16FR10M A16FR120 A16FR120M A16FR20 A16FR20M A16FR40 A16FR40M A16FR60 16F 16FR20 16FR80 16F80 16FR40 16FR60 16F20 16F10 16F120 16FR10
OCR Text ... 10 100 150 -- 20 200 275 -- 40 400 500 500 16f(r) 60 600 725 750 12 80 800 950 950 100 1000 1200 1150 120 1200 1400 1350 electrical specifications voltage ratings i f(av) max. average forward current 16 a 180 conduction, half sine wave @ ...
Description 1200v 16A Std. Recovery Diode in a DO-203AA (DO-4)package
1000V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
100V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
600V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
400V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
800V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
STANDARD RECOVERY DIODES

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    CM1400DU-24NF

POWEREX[Powerex Power Semiconductors]
Part No. CM1400DU-24NF
OCR Text ...- - - - - - 100 Max. 220 25 4.7 400 300 1000 300 800 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time** Diode Reverse Recove...600 1200 1600 2000 2400 2800 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) ...
Description Mega Power Dual⑩ IGBTMOD 1400 Amperes/1200 Volts
Mega Power Dual IGBTMOD 1400 Amperes/1200 Volts

File Size 75.18K  /  4 Page

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    MDS80-1200 MDS80-800 MDS35-800 MDS50-1200 MDS50 MDS50-800 MDS80 MDS35 MDS35-1200 -MDS35-800

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
Part No. MDS80-1200 MDS80-800 MDS35-800 MDS50-1200 MDS50 MDS50-800 MDS80 MDS35 MDS35-1200 -MDS35-800
OCR Text ...j = 125C Parameter 35 50 25 420 400 50 70 35 630 600 80 85 55 730 700 A2S A/s A W C V 1/7 A A A Unit 800 1800 2450 50 4 1 - 40 to + 150 - 40 to + 125 5 ISOTOP is a registred trademark of STMicroelectronics December 2000 - Ed: 4 ...
Description DIODE / SCR MODULE
DIODE / SCR MODULE
TV 4C 4#16 SKT PLUG RECP
TV 8C 8#20 PIN PLUG RECP 二极可控硅模

File Size 398.00K  /  7 Page

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    BUP313D Q67040-A4228-A2 BUP313-D

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BUP313D Q67040-A4228-A2 BUP313-D
OCR Text ...Turn-off delay time td(off) 400 530 VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Fall time tf 70 95 VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Free-Wheel Diode Diode forward voltage VF 2.2 1.7 2.8 - V IF = ...
Description From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)
IGBT Duopack (IGBT with Antiparallel ...

File Size 110.41K  /  8 Page

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    BUP314D Q67040-A4226-A2

Siemens Semiconductor Group
SIEMENS AG
Part No. BUP314D Q67040-A4226-A2
OCR Text ...4 1.0 2 0.5 0 0 200 400 600 800 1000 1200 V 1600 VCE 0.0 0 200 400 600 800 1000 1200 V 1600 VCE Semiconductor Group 7 Jul-30-1996 BUP 314D Typ. forward characteristics IF = f (VF) parameter: Tj 50 A Tra...
Description From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管(低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管

File Size 104.06K  /  9 Page

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