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  41 11-duty Datasheet PDF File

For 41 11-duty Found Datasheets File :: 15013    Search Time::2.281ms    
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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ...0.88 --- 0.82 --- 38 --- 45 --- 41 --- 50 Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = ...11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF370...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ...- --- --- --- --- --- 0.88 0.80 41 64 43 70 62 A 248 1.3 --- 62 96 65 105 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET symbol...11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3708/3...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ...-- S VDS = 15V, ID = 30A --- 27 41 ID = 15A --- 6.7 --- nC VDS = 16V --- 9.7 --- VGS = 5.0V --- 22 --- VGS = 0V, VDS = 10V --- 11 --- VDD = 15V --- 171 --- ID = 30A ns --- 21 --- RG = 1.8 --- 9.2 --- VGS = 4.5V --- 2672 --- VGS = 0V --- 1...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text .... Typ. Max. Units --------109 0.41 14 56 1.5 --A V ns iC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=14A,VGS=0V TJ...11 0 01 .0 VGS = 20 V 00 .5 @ N t : TJ = 2 oC oe 5 00 .0 0 15 30 45 6 0 10 0 @Nts: oe 1 VGS...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ... 5.0 15 10 40 10 20 15 40 29 50 41 90 22 50 39 60 4.0 -- 6.0 -- 300 -- 280 -- 260 -- 250 -- 62 -- 86 -- Units V V/C V(BR)DSS/TJ Breakdo...11 8 10 12 14 A V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. ...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...-On Time Min VSD trr Qrr ton 36 41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3A, VGS =0V Tj = 125C, Is = 3A, VGS =0V ns Tj = 25C, ...11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (MOSFET) www.irf.com 5 ...
Description MOSFET / SCHOTTKY DIODE

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ... 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) N O TE S : A1 M CASBS L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...-On Time Min VSD trr Qrr ton 36 41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3.0A, VGS =0VR Tj = 125C, Is = 3.0A, VGS =0VR ns Tj =...11 - Typical Forward Voltage Drop Characteristics www.irf.com 7 IRF7807VD2 SO-8 Package De...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ... VDS = 16V, VGS = 0V, IS = 7.0A 41 nC di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7.0A Notes: * Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted ...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ... 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G GD...11-1. Transient Thermal Response Curve for IRF840B (t), T h e r m a l R e s p o n s e D = 0 .5...
Description 500V N-Channel MOSFET

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