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  5.08 03 180 Datasheet PDF File

For 5.08 03 180 Found Datasheets File :: 8382    Search Time::3.14ms    
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    TS1220-600B-TR TS1220-600H TS1220-600H-TR TS1220-700B TS1220-700B-TR TS1220-700H TS1220-700H-TR TYN100012 TYN100012T TYN

ST Microelectronics
STMicroelectronics
Part No. TS1220-600B-TR TS1220-600H TS1220-600H-TR TS1220-700B TS1220-700B-TR TS1220-700H TS1220-700H-TR TYN100012 TYN100012T TYN60012 TYN60012T TYN612 TYN612T TYN80012 TYN80012T TN12 TN1215-1000B-TR TN1215-1000G-TR TN1215-1000H-TR TN1215-600B-TR TN1215-600G-TR TN1215-600H-TR TN1215-800B-TR TN1215-800G-TR TN1215-800H-TR TN1220-600B-TR TN1220-600H-TR TN1220-700B-TR TN1220-700H-TR
OCR Text ...4 1 - 40 to + 150 - 40 to + 125 5 Unit A A ITSM It dI/dt IGM PG(AV) Tstg Tj VRGM Non repetitive surge peak on-state current I t Val...08 3.70 8.90 8/10 TN12, TS12 and TYNx12 Series PACKAGE MECHANICAL DATA IPAK (Plastic) DIM...
Description SENSITIVE & STANDARD(12A SCRs)

File Size 112.25K  /  10 Page

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    UPC8179TK UPC8179TK-E3

NEC Corp.
California Eastern Labs
NEC[NEC]
Part No. UPC8179TK UPC8179TK-E3
OCR Text ...in Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) * SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V * HIGH EFFICIENCY: PO(1dB) = +2.0 dBm TYP at f = 1.0...08 17.48 17.79 18.12 18.29 18.55 18.71 18.93 19.03 19.12 19.06 19.06 18.93 18.88 18.71 18.60 18.38 1...
Description SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

File Size 239.26K  /  6 Page

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    2SJ217

NEC
Hitachi Semiconductor
Part No. 2SJ217
OCR Text ...rive device Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P ...08 0.04 ID = -50 A 0.02 VGS = -10 V -10, -20 A 0 -40 40 0 80 120 Case Temperature TC (C) -1...
Description Silicon P-Channel MOS FET

File Size 48.19K  /  9 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ...s -50 -10 V -8 V I D (A) -40 -4.5 V -6 V -5 V -4 V -30 -3.5 V -20 -3 V -10 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 Case Temperature Tc (C) 160 -5, -10 A 100 30 10...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ...aracteristics -50 -10 V -8 V -4.5 V -50 Typical Transfer Characteristics V DS = -10 V Pulse Test Tc = -25 C 25 C (A) ID Drain Current ...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A Forward T...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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    2SJ542

HITACHI[Hitachi Semiconductor]
Part No. 2SJ542
OCR Text ... -12 ID (A) -16 -3.5 V -16 -12 Tc = 75C Drain Current -8 -2.5 V -4 VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8...08 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 100 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.62K  /  9 Page

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    2SJ543

HITACHI[Hitachi Semiconductor]
Part No. 2SJ543
OCR Text ...aracteristics -50 -10 V -8 V -4.5 V -50 Typical Transfer Characteristics V DS = -10 V Pulse Test Tc = -25 C 25 C (A) ID Drain Current ...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A Forward T...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.32K  /  9 Page

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    2SJ551 2SJ551L 2SJ551S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ551 2SJ551L 2SJ551S
OCR Text ...V -12 ID (A) -16 -3.5 V -16 -12 Tc = 75C Drain Current -8 -2.5 V -4 VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8...08 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 100 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 54.47K  /  9 Page

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    2SJ552 2SJ552L 2SJ552S 2SJ552L/S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ552 2SJ552L 2SJ552S 2SJ552L/S
OCR Text ...aracteristics -50 -10 V -8 V -4.5 V -50 Typical Transfer Characteristics V DS = -10 V Pulse Test Tc = -25 C 25 C (A) ID Drain Current ...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A Forward T...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
Power switching MOSFET

File Size 55.15K  /  9 Page

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    2SJ554

HITACHI[Hitachi Semiconductor]
Part No. 2SJ554
OCR Text ...put Characteristics -50 -8 V -3.5 V -50 Typical Transfer Characteristics V DS = -10 V I D (A) -5 V -30 -4 V VGS = -10 V -20 -3 V ...08 I D = -50 A V GS = -4 V 0.04 -10 A -20 A -50 A -10,-20A Tc = -25 C 10 3 1 0.3 0.1 -0.1 -0.3...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.62K  /  9 Page

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