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ABRACON CORP
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| Part No. |
ASV-18-200.0000MHZ-50-a-T ASV-18-200.0000MHZ-C-50 ASV-18-200.0000MHZ-A-T5 ASV-25-200.0000MHZ-F-C-A-T ASV-0.3120MHZ-D-J-T5 ABRACONCORP-ASV-25-FREQ-F-S-A ASV-25-FREQ-F-S-50-a-T5 ASV-18-0.3120MHZ-D-J-A-T5 ASV-0.3120MHZ-D-H-50 ASV-0.3120MHZ-D-H-S-50-a-T ASV-0.3120MHZ-D-H-A
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| OCR Text |
... 30 pp m 5 0 50pf h 35 ppm c 50 ppm * temp options i, d, and e only s 45/55% @ 1/2vdd frequency xx.xxxxmhz freq. stability output load s...a r e p o e g a t l o v y l p p u s tri-state packaging
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| Description |
CRYSTAL OSCILLATOR, CLOCK, 200 MHz, HCMOS/TTL OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 0.312 MHz, HCMOS/TTL OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 0.312 MHz - 200 MHz, HCMOS/TTL OUTPUT
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| File Size |
867.63K /
2 Page |
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California Eastern Laboratories
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| Part No. |
NE651R479A-T1-A
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| OCR Text |
...stance, channel to case c/w 30 50 f = 1.9 ghz, v ds =3.5 v p in = +15 dbm, r g = 1 k ? , i dsq = 50 ma (rf off) 2 notes: 1. p in = 0 dbm. 2. dc performance is 100% tested. wafers are sample tested for rf performance. wafer reject... |
| Description |
MEDIUM POWER GaAs HJ-FET
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| File Size |
453.74K /
11 Page |
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it Online |
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California Eastern Laboratories
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| Part No. |
NE552R479A-T1A-A
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| OCR Text |
... 0.20.1 (bottom view) 3.60.2 1.50.2 1.2 max. 0.8 max. 1.0 max. source gate drain 0.40.15 5.7 max. 5.7 max. 0.60.15 0.80.15 4.4 max. 4.2 max. source gate drain a w 0 x 0 0 1
absolute maximum ratings 1 (t a = 25 c) symbols pa... |
| Description |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
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| File Size |
408.19K /
9 Page |
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it Online |
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NEC Corp.
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| Part No. |
UPD168116AK9-9B4-A
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| OCR Text |
...n 5a in 5b 43 44 45 46 47 48 49 50 51 52 53 54 55 56 in 7a fil 7 r 7 fb 7 out 7a v m7 out 7b v dd lgnd cosc oe 1 clk 1 cw 1 oe 2 /in 3a in 7...a 3 out 6b h-bridge 6 output pin b 4 out 6a h-bridge 6 output pin a 5 pgnd 56 h-bridge 5, h... |
| Description |
7-CHANNEL H-BRIDGE DRIVER WITH A MICRO STEP FUNCTION SUPPORTING PULSE INPUT
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| File Size |
247.77K /
26 Page |
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Socay Electornics Co., ...
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| Part No. |
ESD05V52D-A
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| OCR Text |
...) u iec61000-4-4 (eft) 40a (5/50 s) u cellular handsets and accessories u portable electronics u industrial controls u se...a mechanical characteristics d escription feature functional diagram applications ... |
| Description |
Transient Voltage Suppressors for ESD Protection
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| File Size |
152.55K /
3 Page |
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Advanced Power Electron...
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| Part No. |
AP4N1R8CMT-A
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| OCR Text |
... g total gate charge i d =20a - 50 80 nc q gs gate-source charge v ds =20v - 19 - nc q gd gate-drain ("miller") charge v gs =4.5v - 10 - nc ...a critical component in life support or other similar systems is not authorized. apec does not assum... |
| Description |
N-CHANNEL ENHANCEMENT MODE
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| File Size |
69.23K /
6 Page |
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Advanced Power Electron...
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| Part No. |
AP4N1R1CDT-A
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| OCR Text |
... halogen-free product +20 / -12 50.6 40.5 265 a p4n1r1c series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer wit... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
69.15K /
6 Page |
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it Online |
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