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Hynix
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| Part No. |
HYMD564646CP6 HYMD564646CP6J
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| OCR Text |
...fered ddr sdram dimms based on 512mb c ver. (tsop) features address table organization ranks sdrams # of drams # of row/bank/column address refresh method 256mb 32m x 64 1 32mb x 16 4 13(a0~a12)/2(ba0,ba1)/10(a0~a9) 8k / 64ms 512mb 64m x... |
| Description |
184Pin Unbuffered DDR SDRAM DIMMs
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| File Size |
789.79K /
30 Page |
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it Online |
Download Datasheet
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IDT
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| Part No. |
IDT79R3052E IDT79R3052 IDT79R3051E IDT79R3051
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| OCR Text |
...tended Architecture Versions
512mb
2874 drw 03
The base versions of the architecture (the IDT79R3051 and IDT79R3052) remove the TLB and institute a fixed address mapping for the various segments of the virtual address space. The base... |
| Description |
RISControllers?
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| File Size |
333.66K /
26 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
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| Part No. |
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
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| OCR Text |
512mb, 1GB Unbuffered SODIMMs
DDR2 SDRAM
DDR2 Unbuffered SODIMM
200pin Unbuffered SODIMM based on 512mb B-die 64bit Non-ECC
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT... |
| Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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| File Size |
325.20K /
19 Page |
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it Online |
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MICRON
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| Part No. |
MT46H16M32
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| OCR Text |
512mb: 32 Meg x 16, 16 Meg x 32 Mobile DDR SDRAM
Mobile Double Data Rate (DDR) SDRAM
MT46H32M16LF - 8 Meg x 16 x 4 Banks MT46H16M32LF - 4 Meg x 32 x 4 Banks
For a complete data sheet, please refer to www.micron.com/mobileds.
Featu... |
| Description |
Mobile Double Data Rate (DDR) SDRAM
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| File Size |
89.85K /
3 Page |
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it Online |
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Samsung Electronics Inc
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| Part No. |
K4H511638D
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| OCR Text |
512mb(x16, DDP)
DDR SDRAM
DDP 512mbit DDR SDRAM
8M x 16bit x 4 Banks DDR SDRAM Specification
Revision 1.0 July. 2002
This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibit... |
| Description |
IC,SDRAM,DDR,4X8MX16,CMOS,TSSOP,66PIN,PLASTIC
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| File Size |
53.66K /
12 Page |
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it Online |
Download Datasheet |
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Price and Availability
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