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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4R271669E
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| OCR Text |
...to access this core at up to 1.6gb/s. control registers: the cmd, sck, sio0 and sio1 pins appear in the upper center of figure 2. they are used to write and read a block of cont rol registers. these registers supply the rdram configur... |
| Description |
128Mbit RDRAM(E-die)
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| File Size |
292.00K /
20 Page |
 View
it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4R271669F
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| OCR Text |
...to access this core at up to 1.6gb/s. control registers: the cmd, sck, sio0 and sio1 pins appear in the upper center of figure 2. they are used to write and read a block of cont rol registers. these registers supply the rdram configur... |
| Description |
128Mbit RDRAM(F-die)
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| File Size |
293.32K /
20 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4R881869 K4R881869M-NCK8 K4R881869M-NBCCG6
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| OCR Text |
... bandwidth per dram device - 1.6gb/s sustained data transfer rate - separate control/data buses for maximu m e fficiency - separate row and column control buses fo r e as y s cheduling and highest performance - 32 banks: four transaction... |
| Description |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
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| File Size |
4,098.44K /
64 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K4R441869A-NM K4R441869A-MCK8 K4R441869A-NCK7
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| OCR Text |
... bandwidth per dram device - 1.6gb/s sustained data transfer rate - separate control and data buses for maximized efficiency - separate row and column control buses for easy scheduling and highest performance - 32 banks: four transaction... |
| Description |
8M X 18 DIRECT RAMBUs DRAM, 45 ns, PBGA62
K4R271669A-N(M):Direct RDRAMData sheet
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| File Size |
312.25K /
20 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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