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  80v 12a Datasheet PDF File

For 80v 12a Found Datasheets File :: 581    Search Time::1.032ms    
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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710ZPB IRF3710ZLPBF IRF3710ZSPBF IRF3710ZPBF IRF3710ZXPBF
OCR Text ...0V VGS = -20V nC ID = 35A VDS = 80v VGS = 10V ns VDD = 50V ID = 35A RG = 6.8 VGS = 10V D nH Between lead, f f f 6mm (0.25in.) from ...12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sampl...
Description AUTOMOTIVE MOSFET 汽车MOSFET
HEXFET Power MOSFET

File Size 321.21K  /  12 Page

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    AUIRF540Z AUIRF540ZS AUIRF540ZSTRL AUIRF540ZSTRR

International Rectifier
Part No. AUIRF540Z AUIRF540ZS AUIRF540ZSTRL AUIRF540ZSTRR
OCR Text ...oss Coss eff. nC ID = 22A VDS = 80v VGS = 10V VDD = 50V ID = 22A RG = 12 VGS = 10V Between lead, e e ns D 6mm (0.25in.) from pa...12a. Unclamped Inductive Test Circuit V(BR)DSS tp Starting T J , Junction Temperature (C) I AS ...
Description HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET

File Size 327.27K  /  14 Page

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    IRFU3412PBF IRFR3412PBF

IRF[International Rectifier]
Part No. IRFU3412PBF IRFR3412PBF
OCR Text ...VDS = 95V, VGS = 0V A 250 VDS = 80v, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified)...12a) ISD 29A, di/dt 420A/s, VDD V(BR)DSS, T J 150C Calculated continuous current based o...
Description SMPS MOSFET

File Size 222.11K  /  10 Page

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    FDD850N10L

Fairchild Semiconductor
Part No. FDD850N10L
OCR Text ...e voltage drain current v ds = 80v, v gs = 0v - - 1 a v ds = 80v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v,...12a - 61 75 m v gs = 5v, i d = 12a - 64 96 m g fs forward transconductance v ds = 10v...
Description N-Channel PowerTrench MOSFET 100 V, 15.7 A, 75 m Ohm

File Size 302.25K  /  8 Page

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    AP15P15GH-HF AP15P15GH-HF14

Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Part No. AP15P15GH-HF AP15P15GH-HF14
OCR Text ... q gs gate-source charge v ds =-80v - 8.2 - nc q gd gate-drain ("miller") charge v gs =-10v - 16.6 - nc t d(on) turn-on delay time 2 v ds =-50v - 11 - ns t r rise time i d =-12a - 26 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v -...
Description 15 A, 140 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 91.52K  /  4 Page

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSYE13A0R4 FSYE13A0D FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3
OCR Text ...AU) CISS COSS CRSS RJC VDS = 80v, VGS = 0V VGS = 20V VGS = 12V, ID = 12a ID = 8A, VGS = 12V Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Dela...
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 55.19K  /  8 Page

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    FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 FSS13A0R3 FSS13A0R4 FN4487

INTERSIL[Intersil Corporation]
Part No. FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 FSS13A0R3 FSS13A0R4 FN4487
OCR Text ...CISS COSS CRSS RJC RJA VDS = 80v, VGS = 0V VGS = 20V VGS = 12V, ID = 12a ID = 9A, VGS = 12V Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Dela...
Description From old datasheet system
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
2A/ 100V/ 0.170 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

File Size 70.31K  /  8 Page

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    IRF[International Rectifier]
Part No. IRF6668TRBF IRF6668PBF
OCR Text ... 7.8nC RDS(on) Qoss 12nC 80v max 20V max 12m@ 10V Qgs2 1.6nC Qrr 40nC Vgs(th) 4.0V 22nC MZ Applicable DirectFET...12a VDS= 64V VDS= 40V A mJ A 50 40 30 20 10 0 4 6 T J = 25C 8 10 12 T J = 125C ID = 12a ...
Description DirectFET Power MOSFET

File Size 624.70K  /  9 Page

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    AP9980GH

Advanced Power Electronics Corp.
Part No. AP9980GH
OCR Text 80v single drive requirement r ds(on) 45m fast switching performance i d 21.3a description absolute maximum ratings symbol units v ds v...12a - - 45 m ? v gs =4.5v, i d =8a - - 55 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250u...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 170.15K  /  6 Page

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    SSD12P10 SSD12P10-15

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
Part No. SSD12P10 SSD12P10-15
OCR Text ...c) i dss - - -25 a v ds = -80v, v gs =0 - - 210 v gs = -10v, i d = -8a static drain-source on-resistance 3 r ds(on) - - 250 m ?...12a, v gs =0 continuous source current(body diode) i s - - -12 a pulsed source current(body diod...
Description P-Channel Enhancement MOSFET

File Size 430.35K  /  4 Page

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For 80v 12a Found Datasheets File :: 581    Search Time::1.032ms    
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