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9.9a Datasheet PDF File

For 9.9a Found Datasheets File :: 4788 Search Time::1.515ms
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				Sharp Corporation Sharp, Corp.
Part No.	LH543601M-20 LH543601M-25 LH543601M-30 LH543601P-25 LH543601P-20 LH543601M-35 LH543601P-30 LH543601P-35
OCR Text	...it word width selectable 36/18/9-bit word width on port b independently-synchronized (fully-asynchronous) operation of port a and port b ...9a d 8a v sso d 7a d 6a d 5a d 4a d 3a d 2a d 1a d 0a rs rt 1 d 1b d 2b d 3b d 4b d 5b d 6b d 7b d 8...
Description	256 x 36 x 2 Bidirectional FIFO 256 × 36 × 2双向先进先出
File Size	366.72K / 43 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7338PBF
OCR Text	...Units C/W www.irf.com 1 9/30/04 IRF7338PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DS...9A VGS = -2.7V, ID = -1.5A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 6.0V, ID = 6.0A VDS =...
Description	HEXFET Power MOSFET
File Size	221.74K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLL024NQ IRLL024NQTRPBF
OCR Text	... 16 87 See Fig.16c, 16d, 19, 20 9.9 -55 to + 175 Units A W mW/C V mJ A mJ V/ns C Thermal Resistance Parameter RJA RJA Junction-to-A...9A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 125C 100 VGS = 16V nA -100 VGS = -16V 17 I...
Description	3.1 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET HEXFET? Power MOSFET HEXFET㈢ Power MOSFET 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
File Size	162.32K / 10 Page	View it Online	Download Datasheet

				MSK[M.S. Kennedy Corporation] M.S. Kennedy Corporatio...
Part No.	MSKDHC2800SRG DHC2803SE DHC2803S DHC2803SH DHC2805S DHC2805SE DHC2805SH DHC2805S-15
OCR Text	...90 160 140 0 0 30 220 60 35 2 1.9 400 - Max. 5.05 5.20 1200 1200 1500 1500 190 475 200 200 15 50 25 50 500 750 300 300 500 500 500 500 2...9A IOUT NO OUTPUT BUS CAPCITANCE .9A IOUT INCLUDES 100F ON OUTPUT BUS 10 0.0 0.5 1.0 1.5 ...
Description	All Ceramic Capacitors9 6W DC-DC CONVERTERS
File Size	407.79K / 9 Page	View it Online	Download Datasheet

				Panasonic Semiconductor Sanyo Semicon Device
Part No.	2SC5899
OCR Text	... 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Vo...9A, IB2=--3.6A IC=7A, IB1=0.9A, IB2=--3.6A Conditions Ratings min 15 4 7 3 1.5 3.0 0.2 V V s s typ m...
Description	Horizontal Deflection Switching Transistors Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
File Size	29.73K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	RF1S4N100SM RFP4N100
OCR Text	...= 2.5a, v gs = 10v (figures 8, 9) - - 3.500 ? turn-on delay time t d(on) v dd = 500v, i d 3.9a, r gs = 9.1 ?, r l = 120 ? ) --30ns rise time t r --50ns turn-off delay time t d(off) - - 170 ns fall time t f --50ns total gate charge (...
Description	4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
File Size	94.50K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7389 IRF7389TR
OCR Text	...0C V DS V GS N-Channel 30 7.3 5.9 30 2.5 2.5 1.6 82 4.0 0.20 3.8 -2.2 -55 to + 150 C 140 -2.8 Maximum P-Channel -30 20 -5.3 -4.2 -30 -2...9A VGS = -4.5V, ID = -3.6A VDS = VGS, I D = 250A VDS = VGS, I D = -250A VDS = 15V, I D = 5.8A VDS...
Description	Generation v technology 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
File Size	210.72K / 10 Page	View it Online	Download Datasheet

				Samwin
Part No.	SW630
OCR Text	...p d (@tc=25 ) : 200v : 0.4ohm : 9.0a : 26nc : 72w g s d absolute maximum ratings symbol parameter value units v dss draintosourcevoltage 200...9a (note4,5) ns v dd =100v,i d =9a r g =50ohm (note4,5) pf v gs =0v,v ds =25v f=1mhz i gss unit s uc...
Description	N-Channel MOSFET
File Size	686.90K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFL014N
OCR Text	...emperature Range Max. 2.7 1.9 1.5 15 2.1 1.0 8.3 20 48 1.7 0.1 5.0 -55 to + 150 Units A W W mW/C V mJ A mJ V/ns C Thermal...9A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 0.85A 1.0 VDS = 44V, VGS = 0V A 25 VDS = 44V, V...
Description	55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的，1.9AN沟道HEXFET功率MOSFET5V的，1.9A沟道的HEXFET功率马鞍山场效应管） Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A) Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
File Size	140.28K / 8 Page	View it Online	Download Datasheet

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