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Motorola
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| Part No. |
MRF6522-70
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| OCR Text |
...ed Performance @ Full GSM Band, 921-960 MHz, 26 Volts Output Power, P1dB -- 80 Watts (Typ) Power Gain @ P1dB -- 16 dB (Typ) Efficiency @ P1dB -- 58% (Typ) * Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF65... |
| Description |
MRF6522-70, MRF6522-70R3 921-960 MHz, 70 W, 26 V Lateral N-Channel RF Power MOSFETs
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| File Size |
386.43K /
8 Page |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MHVIC910HNR2
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| OCR Text |
921 MHz - 960 MHz SiFET RF Integrated Power Amplifier
The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale's newest High Voltage (26 Volts) LDMOS IC technology, and contains a three - stage amplifier. Targe... |
| Description |
921 MHz-960 MHz SiFET RF Integrated Power Amplifier
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| File Size |
323.03K /
12 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
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| Part No. |
MW4IC915MBR1 MW4IC915GMBR1 MW4IC915
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| OCR Text |
... IDQ2 = 240 mA, 869-894 MHz and 921-960 MHz Output Power -- 3 Watts Avg. Power Gain -- 31 dB Efficiency -- 19% Spectral Regrowth @ 400 kHz Offset = -65 dBc Spectral Regrowth @ 600 kHz Offset = -83 dBc EVM -- 1.5% * Typical Performance: 860-... |
| Description |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
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| File Size |
665.04K /
16 Page |
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it Online |
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Motorola
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| Part No. |
MRF9130LR3
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| OCR Text |
...lications with frequencies from 921 to 960 mhz, the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. ? typical performance for... |
| Description |
28 V LATERAL N-CHANNEL RF POWER MOSFETs
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| File Size |
583.42K /
12 Page |
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it Online |
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Freescale (Motorola)
飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060MBR1
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| OCR Text |
...atts avg., full frequency band (921 - 960 mhz) power gain ? 20 db drain efficiency ? 46% spectral regrowth @ 400 khz offset = - 62 dbc spectral regrowth @ 600 khz offset = - 78 dbc evm ? 1.5% rms gsm application ? typical gsm performanc... |
| Description |
RF Power Field Effect Transistors
CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014
CAP CER .10UF 100V 20% AXIAL
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| File Size |
530.35K /
16 Page |
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it Online |
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Price and Availability
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