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  bw3.125 Datasheet PDF File

For bw3.125 Found Datasheets File :: 145    Search Time::1.266ms    
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    NEC Corp.
Part No. UPD44321361GF-A75 UPD44321181GF-A75
OCR Text ...48 49 50 a6 a7 /ce ce2 /bw4 /bw3 /bw2 /bw1 /ce2 v dd v ss clk /we /cke /g adv a18 a17 a8 a9 mode a5 a4 a3 a2 a1 a0 nc nc v ss v dd nc a19...125 c note ?2.0 v (min.) (pulse width : 2 ns) caution exposing the device to stress above th...
Description 32M-BIT ZEROSB SRAM FLOW THROUGH OPERATION

File Size 294.20K  /  24 Page

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    UPD44321361GF-A75Y UPD44321181GF-A75 UPD44321181GF-A75Y

NEC
Part No. UPD44321361GF-A75Y UPD44321181GF-A75 UPD44321181GF-A75Y
OCR Text ...48 49 50 a6 a7 /ce ce2 /bw4 /bw3 /bw2 /bw1 /ce2 v dd v ss clk /we /cke /g adv a18 a17 a8 a9 mode a5 a4 a3 a2 a1 a0 nc nc v ss v dd nc a19...125 c note ?2.0 v (min.) (pulse width : 2 ns) caution exposing the device to stress above those li...
Description 32M-bit(1M-word x 36-bit) ZEROSB(TM) SRAM
32M-bit(2M-word x 18-bit) ZEROSB(TM) SRAM

File Size 282.97K  /  24 Page

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    NEC[NEC]
Part No. UPD44321361GF-A75 UPD44321181 UPD44321181GF-A75
OCR Text ...4321361GF] Marking Side /BW4 /BW3 /BW2 /BW1 /CKE /CE2 ADV CLK CE2 /WE A18 A17 VDD VSS /CE A6 A7 A8 A9 /G 100 99 98 97 96 95 94 93 92 91...125 C Symbol VDD VDDQ VIN VI/O TA Conditions MIN. -0.5 -0.5 -0.5 -0.5 0 Note Note TYP. MAX. +...
Description 32M-BIT ZEROSB SRAM FLOW THROUGH OPERATION

File Size 289.51K  /  24 Page

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    UPD44321182GF-A50 UPD44321182GF-A50Y UPD44321362GF-A50 UPD44321362GF-A50Y

NEC
Part No. UPD44321182GF-A50 UPD44321182GF-A50Y UPD44321362GF-A50 UPD44321362GF-A50Y
OCR Text ...48 49 50 a6 a7 /ce ce2 /bw4 /bw3 /bw2 /bw1 /ce2 v dd v ss clk /we /cke /g adv a18 a17 a8 a9 mode a5 a4 a3 a2 a1 a0 nc nc v ss v dd nc a19...125 c note ?2.0 v (min.) (pulse width : 2 ns) caution exposing the device to stress above those li...
Description 32M-bit(2M-word x 16-bit) ZEROSB(TM) SRAM
32M-bit(1M-word x 36-bit) ZEROSB(TM) SRAM

File Size 280.53K  /  24 Page

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    NEC Corp.
Part No. UPD44321182GF-A50 UPD44321362GF-A50
OCR Text ...48 49 50 a6 a7 /ce ce2 /bw4 /bw3 /bw2 /bw1 /ce2 v dd v ss clk /we /cke /g adv a18 a17 a8 a9 mode a5 a4 a3 a2 a1 a0 nc nc v ss v dd nc a19...125 c note ?2.0 v (min.) (pulse width : 2 ns) caution exposing the device to stress above th...
Description Film Capacitor; Voltage Rating:630VDC; Capacitor Dielectric Material:Polypropylene; Capacitance:22000pF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:Yes; Series:171; Termination:Radial Leaded
32M-BIT ZEROSB SRAM PIPELINED OPERATIO

File Size 294.01K  /  24 Page

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    IS61LV632A IS61LV632A-4PQ IS61LV632A-4TQ IS61LV632A-5PQ IS61LV632A-5TQ IS61LV632A-6PQI IS61LV632A-6TQ IS61LV632A-6TQI IS

INTEGRATED SILICON SOLUTION INC
Xilinx, Inc.
Integrated Silicon Solution, Inc
Part No. IS61LV632A IS61LV632A-4PQ IS61LV632A-4TQ IS61LV632A-5PQ IS61LV632A-5TQ IS61LV632A-6PQI IS61LV632A-6TQ IS61LV632A-6TQI IS61LV632A-7PQ IS61LV632A-7PQI IS61LV632A-7TQI IS61LV632A-8PQ IS61LV632A-8PQI IS61LV632A-8TQ IS61LV632A-8TQI IS61LV632A-6PQ IS61LV632A-7TQ
OCR Text ...DQ1-DQ8, BW2 controls DQ9-DQ16, BW3 controls DQ17-DQ24, BW4 controls DQ25-DQ32, conditioned by BWE being LOW. A LOW on GW input would cause all bytes to be written. Bursts can be initiated with either ADSP (Address Status Processor) or ADSC...
Description 32K X 32 CACHE SRAM, 5 ns, PQFP100
32K X 32 CACHE SRAM, 6 ns, PQFP100
x32 Fast Synchronous SRAM X32号,快速同步SRAM
32K x 32 SYNCHRONOUS FAST STATIC RAM

File Size 118.97K  /  16 Page

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    INTEGRATED SILICON SOLUTION INC
Part No. IS64LF6436-8.5TQA3
OCR Text ...-dq8, bw2 controls dq9-dq16, bw3 controls dq17-dq24, bw4 controls dq25-dq32, condi- tioned by bwe being low. a low on gw input would cause all bytes to be written. bursts can be initiated with either adsp (address status processo...
Description 64K X 36 CACHE SRAM, 8.5 ns, PQFP100

File Size 117.29K  /  17 Page

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