| |
|
 |
NEC Corp.
|
| Part No. |
UPD44321361GF-A75 UPD44321181GF-A75
|
| OCR Text |
...48 49 50 a6 a7 /ce ce2 /bw4 /bw3 /bw2 /bw1 /ce2 v dd v ss clk /we /cke /g adv a18 a17 a8 a9 mode a5 a4 a3 a2 a1 a0 nc nc v ss v dd nc a19...125 c note ?2.0 v (min.) (pulse width : 2 ns) caution exposing the device to stress above th... |
| Description |
32M-BIT ZEROSB SRAM FLOW THROUGH OPERATION
|
| File Size |
294.20K /
24 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
NEC[NEC]
|
| Part No. |
UPD44321361GF-A75 UPD44321181 UPD44321181GF-A75
|
| OCR Text |
...4321361GF]
Marking Side
/BW4 /BW3 /BW2 /BW1 /CKE /CE2 ADV CLK CE2 /WE A18 A17 VDD VSS /CE A6 A7 A8 A9 /G
100 99 98 97 96 95 94 93 92 91...125 C Symbol VDD VDDQ VIN VI/O TA Conditions MIN. -0.5 -0.5 -0.5 -0.5 0
Note Note
TYP.
MAX. +... |
| Description |
32M-BIT ZEROSB SRAM FLOW THROUGH OPERATION
|
| File Size |
289.51K /
24 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
NEC Corp.
|
| Part No. |
UPD44321182GF-A50 UPD44321362GF-A50
|
| OCR Text |
...48 49 50 a6 a7 /ce ce2 /bw4 /bw3 /bw2 /bw1 /ce2 v dd v ss clk /we /cke /g adv a18 a17 a8 a9 mode a5 a4 a3 a2 a1 a0 nc nc v ss v dd nc a19...125 c note ?2.0 v (min.) (pulse width : 2 ns) caution exposing the device to stress above th... |
| Description |
Film Capacitor; Voltage Rating:630VDC; Capacitor Dielectric Material:Polypropylene; Capacitance:22000pF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:Yes; Series:171; Termination:Radial Leaded 32M-BIT ZEROSB SRAM PIPELINED OPERATIO
|
| File Size |
294.01K /
24 Page |
View
it Online |
Download Datasheet
|
| |
|
 |

INTEGRATED SILICON SOLUTION INC Xilinx, Inc. Integrated Silicon Solution, Inc
|
| Part No. |
IS61LV632A IS61LV632A-4PQ IS61LV632A-4TQ IS61LV632A-5PQ IS61LV632A-5TQ IS61LV632A-6PQI IS61LV632A-6TQ IS61LV632A-6TQI IS61LV632A-7PQ IS61LV632A-7PQI IS61LV632A-7TQI IS61LV632A-8PQ IS61LV632A-8PQI IS61LV632A-8TQ IS61LV632A-8TQI IS61LV632A-6PQ IS61LV632A-7TQ
|
| OCR Text |
...DQ1-DQ8, BW2 controls DQ9-DQ16, BW3 controls DQ17-DQ24, BW4 controls DQ25-DQ32, conditioned by BWE being LOW. A LOW on GW input would cause all bytes to be written. Bursts can be initiated with either ADSP (Address Status Processor) or ADSC... |
| Description |
32K X 32 CACHE SRAM, 5 ns, PQFP100 32K X 32 CACHE SRAM, 6 ns, PQFP100 x32 Fast Synchronous SRAM X32号,快速同步SRAM 32K x 32 SYNCHRONOUS FAST STATIC RAM
|
| File Size |
118.97K /
16 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
INTEGRATED SILICON SOLUTION INC
|
| Part No. |
IS64LF6436-8.5TQA3
|
| OCR Text |
...-dq8, bw2 controls dq9-dq16, bw3 controls dq17-dq24, bw4 controls dq25-dq32, condi- tioned by bwe being low. a low on gw input would cause all bytes to be written. bursts can be initiated with either adsp (address status processo... |
| Description |
64K X 36 CACHE SRAM, 8.5 ns, PQFP100
|
| File Size |
117.29K /
17 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|