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    BCR25CM12LB

Renesas Electronics Corporation
Part No. BCR25CM12LB
OCR Text ... 7 jan 29, 2014 performance curves maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 50hz) surge on-state current (a) gate characteristics (i, ii an...
Description Triac

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    ADPOW[Advanced Power Technology]
Part No. APT5040KFLL
OCR Text ...DURATION Typical Performance curves 35 30 25 VGS=15 &10V APT5040KFLL ID, DRAIN CURRENT (AMPERES) 6.5V 6V 20 15 10 5 0 02 4 6 8 10 12 14 16 18 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS ...
Description POWER MOS 7 FREDFET

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    ADPOW[Advanced Power Technology]
Part No. APT50GF120JRDQ3
OCR Text curves (R) APT50GF120JRDQ3 1200V APT50GF120JRDQ3 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recov...
Description FAST IGBT & FRED

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    ADPOW[Advanced Power Technology]
Part No. APT50GN60BG APT50GN60B
OCR Text curves (R) APT50GN60B APT50GN60BG* APT50GN60B(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low fr...
Description IGBT

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    ADPOW[Advanced Power Technology]
Part No. APT50GT120JRDQ2
OCR Text curves (R) APT50GT120JRDQ2 1200V APT50GT120JRDQ2 Thunderbolt IGBT(R) The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness ...
Description Thunderbolt IGBT

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    ADPOW[Advanced Power Technology]
Part No. APT60GT60JRDQ3
OCR Text curves (R) APT60GT60JRDQ3 600V APT60GT60JRDQ3 Thunderbolt IGBT(R) The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and...
Description Thunderbolt IGBT

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    MJE2955TAF

ON SEMICONDUCTOR
Part No. MJE2955TAF
OCR Text ...? 1.67 ??? ??? c/w 2safe area curves are indicated by figure 1. both limits are applicable and must be observed. 10 5.0 figure 1. activeregion safe operating area v ce , collectoremitter voltage (volts) 5.0 2.0 1.0 0.2 0.1 20 30 second br...
Description 10 A, 60 V, PNP, Si, POWER TRANSISTOR

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    NCV8452STT3G NCV8452STT1G

ON Semiconductor
Part No. NCV8452STT3G NCV8452STT1G
OCR Text ...mi.com 6 typical characteristic curves 20 0 i d(off) ( a) v d (v) figure 5. standby current vs. supply voltage ? 40 c 25 c 100 c 150 c 540 35 30 25 20 10 15 v in = v out = 0 v 16 12 8 4 0 18 16 14 12 10 8 6 4 2 0 ? 50 ? 25 0 175 1...
Description Self Protected High Side Driver with Temperature
   Self Protected High Side Driver with Temperature

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    MICROSEMI[Microsemi Corporation]
Part No. APT8020LFLL APT8020B2FLL
OCR Text ...N 1.0 Typical Performance curves 100 VGS =15 &10 V APT8020B2_LFLL 8V 7V ID, DRAIN CURRENT (AMPERES) 80 TJ ( C) 0.0271 Dissipated Power (Watts) 0.00899 0.0202 0.293 0.0656 TC ( C) 0.0860 60 6.5V 40 6V 20 5.5V 5V 0...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    TOSHIBA
Part No. TK100E10N1
OCR Text ...8. 8. 8. 8. characteristics curves (note) characteristics curves (note) characteristics curves (note) characteristics curves (note) fig. fig. fig. fig. 8.1 8.1 8.1 8.1 i i i i d d d d - v - v - v - v ds ds ds ds fig. fig. fig....
Description Power MOSFET (N-ch single 60V<VDSS≤150V)

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