ghz-2.170 pdf Datasheet P4 Full Text Search --- IC-ON-LINE


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ghz-2.170 Datasheet PDF File

For ghz-2.170 Found Datasheets File :: 3358 Search Time::2.407ms
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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-26836 ATF-26836-STR ATF-26836-TR1
OCR Text	GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 Features * High Output Power: 18.0 dBm Typical P 1 dB at 12 GHz * Hig...2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gat...
Description	2-16 GHz General Purpose Gallium Arsenide FET
File Size	42.07K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-36163 ATF-36163-BLK ATF-36163-TR1
OCR Text	GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features * Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typica...2 micron gate length with a total gate periphery (width) of 200 microns. Proven gold-based metalliza...
Description	1.5-18 GHz Surface Mount Pseudomorphic HEMT
File Size	84.64K / 10 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45101
OCR Text	GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features * High Output Power: 29.0 dBm Typical P 1 dB at 4 GHz * High Ga...2.5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, re...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	40.00K / 3 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	CXB1558Q-Y
OCR Text	... -- -- -- -- 30 -- -- Unit Gbps GHz ps s ps Application Circuit Current Control Application VSHUT VCLK ECL Level Single Input TTL Le...2 3 4 5 6 7 8 IBIASADJ SDRIV BIASB Q Q BIASA VEE2 Q Q ...
Description	Laser Driver
File Size	271.55K / 11 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF1002 MRF1002MA MRF1002MB
OCR Text	...LA RF DEVICE DATA 3 f = 0.96 GHz Pout , OUTPUT POWER (W pk) 1.09 GHz 2 1.215 GHz 1.5 VCC = 35 V tP = 10 s D = 1% Pout , OUTPUT POWER (W pk) 2.5 3 Pin = 200 mW pk 160 mW pk 2.5 2 120 mW pk 1.5 VCC = 35 V tP = 10 s D = 1% 960 1...
Description	MICROWAVE POWER TRANSISTORS
File Size	109.49K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MRF15030
OCR Text	...mbol Min MRF15030 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON CASE 395C-01, STYLE 1 Value 25 60 4 10 125 0.71 - 65 to +150 Un...2 3 Pin, INPUT POWER (WATTS) 4 5 Gpe Pout 10.3 10.2 Pout , OUTPUT POWER (WATTS) 10.1 10.0 9.9 9.8 9....
Description	RF POWER TRANSISTOR
File Size	156.90K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF15060 MRF15060S
OCR Text	... MRF15060 MRF15060S 60 W, 1.49 GHz RF POWER BIPOLAR TRANSISTORS CASE 451-04, STYLE 1 (MRF15060) CASE 451A-01, STYLE 1 (MF15060S) M...2 MOTOROLA RF DEVICE DATA VBASE R1 D1 Q2 R2 B1 Q1 C17 + C18 C10 R3 C6 C7 C11 +C...
Description	RF POWER BIPOLAR TRANSISTORS
File Size	162.37K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF15090
OCR Text	...CASE 375A-01, STYLE 1 90 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON NPN Silicon RF Power Transistor MRF15090 THERMAL CHARACTERISTIC...2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 120 Pout , OUTPUT POWER (WATTS) 100 80 60 4...
Description	RF POWER TRANSISTOR
File Size	210.46K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text	...es from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier The RF MOSFET Line applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1805 - 1880 MHz. * Typic...
Description	MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
File Size	399.98K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text	...ith frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. * GSM Performance, Full Fr...
Description	HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
File Size	486.59K / 8 Page	View it Online	Download Datasheet

For ghz-2.170 Found Datasheets File :: 3358 Search Time::2.407ms
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