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Sony
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| Part No. |
SGM2014AM
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| OCR Text |
... 1.6 1.8 2.0 2.2 f - Frequency [GHz]
0
-3-
Ga - Gain [dB]
2.0
20
2.0
20
SGM2014AM
S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 ... |
| Description |
GaAs N-channel Dual Gate MES FET
From old datasheet system
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| File Size |
47.88K /
5 Page |
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Sony
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| Part No. |
SGM2014AN
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| OCR Text |
... 1.6 1.8 2.0 2.2 f - Frequency [GHz]
0
-3-
Ga - Gain [dB]
2.0
20
2.0
20
SGM2014AN
S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 ... |
| Description |
GaAs N-channel Dual Gate MES FET
From old datasheet system
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| File Size |
53.43K /
5 Page |
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it Online |
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hitachi
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| Part No. |
2SC4926
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| OCR Text |
GHz Typ * High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
2SC4926
Absolute Maximum Ratings (Ta =...2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, R... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
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| File Size |
51.82K /
8 Page |
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NEC[NEC]
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| Part No. |
2SC5432
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| OCR Text |
...3.0 4.5 0.7 7.0 10.0 1.4
145 GHz 1.5 pF dB 2.5 dB
VCE = 3 V, IC = 7 mA, f = 1 GHz VCB = 3 V, IE = 0, f = 1 MHzNote 2
VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz
Notes 1. Pulse measurement PW 350 s, duty cycl... |
| Description |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
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| File Size |
58.26K /
8 Page |
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it Online |
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Sanyo
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| Part No. |
2SC4867
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| OCR Text |
...Ratings min typ max 1.0 10 270* GHz pF dB dB Unit A A
* : The 2SC4867 is classified by 15mA hFE as follows : Marking : GN hFE rank : 3, 4...2/4
2SC4867
S parameter
No.4856-3/4
2SC4867
S parameter (Common emitter)
VCE=5V, IC=5mA,... |
| Description |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
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| File Size |
126.04K /
4 Page |
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it Online |
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Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
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| Part No. |
FH103 1283
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| OCR Text |
...p 9 0.6 13 1.2 2.5 1.1 max Unit GHz pF dB dB
Note) The specifications shown above are for each individual transistor. Marking : 103
3 2
hFE -- IC
VCE=5V Gain-Bandwidth Product, fT - GHz
2
fT -- IC
VCE=5V
10 7 5 3 2
DC... |
| Description |
High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
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| File Size |
47.75K /
4 Page |
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Sanyo
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| Part No. |
2SC4269
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| OCR Text |
...0.5 15 2.0 1.1 200*
Unit A A GHz pF pF dB dB
* : The 2SC4269 is classified by 5mA hFE as follows :
(Note) Marking : JT hFE rank : 2, 3, 4
Any and all SANYO products described or contained herein do not have specifications that c... |
| Description |
NPN Epitaxial Planar Silicon Transistor VHF Converter, Local Oscillator Applications
NPN Epitaxial Planar Silicon Transistors
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| File Size |
106.39K /
4 Page |
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it Online |
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OKI
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| Part No. |
KGF1312
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| OCR Text |
...= 150 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W
6/7
electronic components Test Circuit and Bias Configuration for KGF1312 at 850 MHz
...2)
(3)
T3
T4
RFC OUT CC
C2
C3
C4
f = 850 MHz T1: Z0 = 50 W, E = 18.0 deg T2:... |
| Description |
Power FET (Plastic Package Type)
From old datasheet system
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| File Size |
80.70K /
7 Page |
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it Online |
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Price and Availability
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