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  hdmostm Datasheet PDF File

For hdmostm Found Datasheets File :: 357    Search Time::1.125ms    
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    IXFH12N90 IXFM12N90 IXFM10N90 IXFH10N90 IXFT13N90 IXFH13N90

IXYS[IXYS Corporation]
ETC
Part No. IXFH12N90 IXFM12N90 IXFM10N90 IXFH10N90 IXFT13N90 IXFH13N90
OCR Text hdmostm Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V 900 V ID25 10 A 12 A 13 A RDS(on) 1.1 W 0.9 W 0.8 W trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions TJ = 25C to 150C TJ = 25C ...
Description HiPerFET Power MOSFETs

File Size 84.79K  /  4 Page

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    IXYS[IXYS Corporation]
Part No. IXFT32N50 IXFH32N50 IXFH30N50 IXFT30N50
OCR Text hdmostm Family VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V ID25 30 A 32 A RDS(on) 0.16 W 0.15 W trr 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Condi...
Description N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.16惟??娌??澧?己??iPerFET???MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 109.42K  /  4 Page

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    IXFH24N50 IXFH26N50 IXFT26N50 IXFM24N50 IXFH26N50S

IXYS[IXYS Corporation]
IXYS, Corp.
Part No. IXFH24N50 IXFH26N50 IXFT26N50 IXFM24N50 IXFH26N50S
OCR Text ...ement Mode High dv/dt, Low trr, hdmostm Family 500 V 21 A 0.25 500 V 24 A 0.23 500 V 26 A 0.20 trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient ...
Description 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
2MM TERMINAL STRIPS
HiPerFET Power MOSFETs 24 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

File Size 156.57K  /  4 Page

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    IXFN180N10

ETC[ETC]
IXYS[IXYS Corporation]
Part No. IXFN180N10
OCR Text ...de isolation * Low RDS (on) hdmostm process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g rated * Low package i...
Description Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFET Single MOSFET Die

File Size 83.10K  /  4 Page

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    IXFK100N25 IXFX100N25

IXYS[IXYS Corporation]
Part No. IXFK100N25 IXFX100N25
OCR Text ...tandard packages l Low RDS (on) hdmostm process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Condit...
Description    HiPerFET Power MOSFETs
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 96.55K  /  2 Page

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    IXFN150N10 IXFK100N10 IXFK150N10

IXYS[IXYS Corporation]
Part No. IXFN150N10 IXFK100N10 IXFK150N10
OCR Text ... nitride isolation Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier q q q q q q q q Symbol Test Conditions Characteristic...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 114.74K  /  4 Page

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    IXYS[IXYS Corporation]
Part No. IXFN150N15
OCR Text ...de isolation * Low RDS (on) hdmostm process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g rated * Low package i...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 69.31K  /  2 Page

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    IXTH12N50A

IXYS Corporation
Part No. IXTH12N50A
OCR Text ... standard packages Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25C, unle...
Description Standard Power MOSFET

File Size 67.10K  /  4 Page

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    IXYS[IXYS Corporation]
ETC[ETC]
Part No. IXTH6N80 IXTM6N80 6N80 IXTM6N80A IXTH6N80A
OCR Text ... standard packages Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25C, unle...
Description    N-Channel Enhancement Mode
32-Bit Microcontroller IC; Controller Family/Series:(ARM9); Number of I/O Pins:24; ADC Channels:5; Number of Timers 8/12/16/32 Bits:0 / 0 / 2 / 1; Number of PWM Channels:1; Clock Speed:200MHz; Interfaces:AC97, I2S, SPI, UART, USB

File Size 87.08K  /  4 Page

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    IXTM10N100 IXTM12N100

IXYS, Corp.
IXYS Corporation
Part No. IXTM10N100 IXTM12N100
OCR Text ... standard packages Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from ...
Description MegaMOS FET 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 105.38K  /  4 Page

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For hdmostm Found Datasheets File :: 357    Search Time::1.125ms    
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