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Electronic Theatre Controls, Inc.
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| Part No. |
PL155AC-213 PLR155AC-213
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| Description |
ST. TRB PLUG 9272
ultra-low Power RS485 Low EMI Transceiver with Shutdown; Package: SO; No of Pins: 8; temperature Range: -40°C to 85°C
ultra-low Power RS485 Low EMI Transceiver with Shutdown; Package: SO; No of Pins: 8; temperature Range: -40°C to 85°C A插头9272
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| File Size |
78.14K /
1 Page |
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it Online |
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Rochester Electronics, LLC
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| Part No. |
AM27C040-90EI AM27C040-200EI AM27C040-150EI AM27C040-90EC AM27C040-200EC AM27C040-150EC AM27C040-120EI
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| Description |
x8 EPROM
Step-Up/Step-Down Switched Capacitor DC/DC Converters with RESET; Package: SO; No of Pins: 8; temperature Range: 0°C to 70°C
14-Bit Parallel Low Glitch Multiplying DAC with 4-Quadrant Resistors; Package: SSOP; No of Pins: 28; temperature Range: 0°C to 70°C
Software-Selectable Multiprotocol Transceiver; Package: SSOP; No of Pins: 28; temperature Range: 0°C to 70°C
Step-Up/Step-Down Switched Capacitor DC/DC Converters with Low-Battery Comparator; Package: SO; No of Pins: 8; temperature Range: -40°C to 85°C
ultra-low Power RS485 Low EMI Transceiver with Shutdown; Package: PDIP; No of Pins: 8; temperature Range: -40°C to 85°C x8存储
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| File Size |
681.56K /
13 Page |
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it Online |
Download Datasheet |
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Fuji Electric Holdings Co., Ltd.
HIROSE ELECTRIC Co., Ltd.
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| Part No. |
ENC151D-14A ENC201D-14A ENC361D-14A ENC221D-14A ENC241D-14A ENC621D-14A ENC101D-14A ENC121D-14A ENC471D-14A ENC391D-14A ENC271D-14A ENC431D-14A ENC102D-14A ENC112D-14A ENC182D-14A ENC681D-14A ENC470D-14B ENC390D-14B ENC330D-14B ENC781D-14A ENC270D-14B
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| Description |
Adjustable Quad Sequencer; temperature Range: -40°C to 85°C; Package: 14-SOIC
5V, Full Duplex, 250kbps Slew Rate Limited With Enable, RS-485/RS-422 Transceiver; temperature Range: -40°C to 85°C; Package: 14-PDIP
±15kV ESD Protected, 3V To 5.5V, 1µA, 250kbps, RS-232 Transmitters/Receivers; temperature Range: 0°C to 70°C; Package: 18-SOIC
5 Ld Voltage Supervisors with Adjustable Power-On Reset, Dual Voltage Monitoring or Watchdog Timer Capability; temperature Range: -40°C to 85°C; Package: 5-SOT-23 T&R
5V, Full Duplex, 5Mbps With Enable, RS-485/RS-422 Transceiver; temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
Ultra Low ON-Resistance, 1.65V to 4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog Switch; temperature Range: -40°C to 85°C; Package: 16-TSSOP
Ultra Low ON-Resistance, 1.65V to 4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog Switch; temperature Range: -40°C to 85°C; Package: 16-TSSOP 性病检验手
STD MOV 性病检验手
Dual LDO with Low Noise, Very high PSRR, and Low IQ; temperature Range: -40°C to 85°C; Package: 10-DFN 性病检验手
5V, Full Duplex, 250kbps Slew Rate Limited With Enable, RS-485/RS-422 Transceiver; temperature Range: -40°C to 85°C; Package: 14-PDIP 性病检验手
5V, Full Duplex, 5Mbps With Enable, RS-485/RS-422 Transceiver; temperature Range: -40°C to 85°C; Package: 14-SOIC T&R 性病检验手
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| File Size |
392.77K /
11 Page |
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it Online |
Download Datasheet |
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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
View
it Online |
Download Datasheet |
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