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30M25 74LV59 A4558 MC100 8M2012 PD0250 324012 TS8P05G
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  idss. Datasheet PDF File

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    EPA040A EPA040AV

Excelics Semiconductor, Inc.
Part No. EPA040A EPA040AV
OCR Text ...a hole source grounding idss sorted in 10ma per bin range electrical characteristics (t a = 25 o c) symbols parameters/ test conditions epa040a epa040av unit min typ max min typ max output pow...
Description High Efficiency Heterojunction Power FET

File Size 46.62K  /  2 Page

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    EPA030D

Excelics Semiconductor, Inc.
Part No. EPA030D
OCR Text ... compensation applications ? idss sorted in 5ma per bin range electrical characteristics (t a = 25 c) caution! esd sensitive device. symbol parameters/test conditions 1 min typ max units p 1db output power at 1db compres...
Description High Performance Heterojunction Dual-Gate FET

File Size 88.92K  /  2 Page

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    EPA030C EPA030CV

Excelics Semiconductor, Inc.
Part No. EPA030C EPA030CV
OCR Text ... via hole source grounding ? idss sorted in 10ma per bin range chip thickness: 75 13 microns (epa030c) chip thickness: 85 15 microns (epa030cv) : via hole no via hole for epa030c all dimensions in microns electrical ch...
Description High Efficiency Heterojunction Power FET

File Size 90.65K  /  2 Page

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    EPA030B

Excelics Semiconductor, Inc.
Part No. EPA030B
OCR Text ...pensation applications idss sorted in 5ma per bin range electrical characteristics (t a = 25 o c) symbols parameters/test conditions min typ max unit p 1db output power at 1db compression v...
Description High Performance Heterojunction Dual-Gate FET

File Size 40.90K  /  2 Page

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    EPA240D

Excelics Semiconductor, Inc.
Part No. EPA240D
OCR Text ...ency, and high reliability idss sorted in 60ma per bin range electrical characteristics (t a = 25 o c) symbols parameters/test conditions min typ max unit p 1db output power at 1db compression f= 2ghz vds=8v,...
Description High Efficiency Heterojunction Power FET

File Size 19.89K  /  2 Page

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    EPA240D-100P

Excelics Semiconductor, Inc.
Part No. EPA240D-100P
OCR Text ... f= 2ghz vds=8v, ids=50% idss f= 4ghz 33.0 dbm 18.5 20.0 g 1db gain at 1db compression f= 2ghz vds=8v, ids=50% idss f= 4ghz 14.5 ...
Description High Efficiency Heterojunction Power FET

File Size 35.48K  /  1 Page

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    EPA240B

Excelics Semiconductor, Inc.
Part No. EPA240B
OCR Text ...h via hole source grounding idss sorted in 60ma per bin range electrical characteristics (t a = 25 o c) symbols param eters/tes...
Description 8-12V high efficiency heterojunction power FET

File Size 34.15K  /  2 Page

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    EFA025A

Excelics Semiconductor, Inc.
Part No. EFA025A
OCR Text ... linearity and reliability idss sorted in 5ma per bin range electrical characteristics (t a = 25 o c) symbols parameters/test conditions min typ max unit output power at 1db compression f=12ghz 21 p 1db vds=8v...
Description 6-12V low distortion GaAs power FET

File Size 32.78K  /  3 Page

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    EFA018A

Excelics Semiconductor, Inc.
Part No. EFA018A
OCR Text ... linearity and reliability idss sorted in 5ma per bin range electrical characteristics (t a = 25 o c) symbols parameters/test conditions min typ max unit p 1db output power at 1db compression f=12ghz vds=6v, ids=50% idss f=...
Description Low Distortion GaAs Power FET

File Size 99.47K  /  2 Page

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    Execlics
Part No. EFA080A-100F
OCR Text ... f=12ghz vds=8v, ids=50% idss 24.0 26.0 dbm g 1db gain at 1db compression f=12ghz vds=8v, ids=50% idss 6.0 7.5 db pae power added eff...
Description Low Distortion GaAs Power FET

File Size 55.71K  /  2 Page

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