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				TOSHIBA[Toshiba Semiconductor]
Part No.	TLP733F TLP734F
OCR Text	...rsenide infrared emitting diode in a six lead plastic DIP. All parameters are tested to the specification of TLP733 and TLP734. (both condit...path: 4.0mm (min.) Insulation thickness: 0.5mm (min.) * Conforming safety standards: DIN 57 804. VDE...
Description	GaAs Ired & Photo-Transistor GaAs Ired & Photo−Transistor
File Size	141.73K / 3 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TLP733 TLP734
OCR Text	...rsenide infrared emitting diode in a six lead plastic DIP. TLP734 is no-base internal connection for high-EMI environments. * * * * Collecto...path : 4.0 mm (min.) 1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base 1: Anode 2: Cat...
Description	GaAs Ired&Photo-Transistor GaAs Ired&Photo−Transistor
File Size	171.29K / 11 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TLP747J TLP747JF
OCR Text	...rsenide infrared emitting diode in a six lead plastic DIP. All parameters are tested to the specification of TLP747J. (both condition and li...path: 4.0mm (min.) Insulation thickness: 0.5mm (min.) Conforming safety standards: DIN 57 804. VDE08...
Description	TOSHIBA Photocoupler GaAs Ired & Photo-Thyristor TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor
File Size	101.23K / 2 Page	View it Online	Download Datasheet

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