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ZARLINK[Zarlink Semiconductor Inc]
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| Part No. |
SL521 SL521CCM SL521ACM SL521BCM
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| OCR Text |
...uesswork. V6 V2 =
a
Voltage induced at pin 6 Voltage at pin 2 Voltage at pin 2 (pin joined to pin 7 and fed from 300 source)
= 0.03 (f = 10MHz)
~ I4
V6
=
RF current component from pin 4 Voltage at pin 6
V6 = 20 mmhos V2
... |
| Description |
150MHz WIDEBAND LOG AMPLIFIER
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| File Size |
222.61K /
7 Page |
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it Online |
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ALLEGRO[Allegro MicroSystems]
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| Part No. |
A1184_06 A1184 A1184ELHLT-T A1184EUA-T A1184LLHLT-T A1184LUA-T
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| OCR Text |
...key sources of the output drift induced by temperature and package stress. This offset reduction technique is based on a signal modulation-demodulation process. The undesired offset signal is separated from the magnetically induced signal i... |
| Description |
Standard Two-Wire Field-Programmable Chopper-Stabilized Unipolar Hall-Effect Switches
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| File Size |
360.24K /
14 Page |
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it Online |
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ETC[ETC]
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| Part No. |
AN-937
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| OCR Text |
... drive impedance is high? dv/dt induced turn-on Can a TTL gate drive a standard HEXFET(R) ? The universal buffer Power dissipation of the gate drive circuit is seldom a problem Can a C-MOS gate drive a standard HEXFET(R) ? Driving HEXFET(R)... |
| Description |
Gate Drive Characteristics and Requirements for HEXFET
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| File Size |
361.85K /
21 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
AN211A
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| OCR Text |
...increased, the negative charge "induced" in the semiconductor increases until the region beneath the oxide effectively becomes an n-type semiconductor region, and current can flow between drain and source through the "induced" channel. In o... |
| Description |
FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE
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| File Size |
327.70K /
12 Page |
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it Online |
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Price and Availability
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