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SGS Thomson Microelectronics
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| Part No. |
AN1316
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| OCR Text |
mdmesh ? , is a revolutionary technology as well as a aconceptualo breakthrough in the high voltage power mosfet area. it is named after the combination of a new vertical drain structure with stmicroelectronics' well established mesh overla... |
| Description |
EVALUATION OF THE NEW HIGH VOLTAGE mdmesh(TM) VERSUS STANDARD MOSFETS
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| File Size |
72.68K /
8 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN1485
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| OCR Text |
...er. 3. trends on power mosfet (mdmesh?) device technology. a revolutionary three-dimensional design of the drain device volume is at the basis of the mdmesh? mosfet device. the extension of the top strip layout to the whole drain volume, b... |
| Description |
mdmesh(TM) PERFORMANCE EVALUATION IN A CONTINUOUS MODE PFC BOOST CONVERTER
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| File Size |
215.12K /
14 Page |
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ST Microelectronics
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| Part No. |
STB11NM60A-1 STP11NM50AFP STP11NM60A STP11NM60AFP
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| OCR Text |
mdmesh?power mosfet n typical r ds (on) = 0.4 w n high dv/dt n low input capacitance and gate charge n low gate input resistance description the mdmesh ? is a new revolutionary mosfet technology that associates the multiple drain pro- c... |
| Description |
N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK mdmesh POWER MOSFET
N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK mdmesh POWER MOSFET
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| File Size |
372.41K /
11 Page |
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ST Microelectronics
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| Part No. |
STB11NM60 STB11NM60-1
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| OCR Text |
mdmesh?power mosfet (*)limited only by maximum temperature allowed (1)i sd <11a, di/dt<400a/ s, v dd <v (br)dss , t j <t jmax n typical r ds (on) = 0.4 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitanc... |
| Description |
N-CHANNEL 600V - 0.4 OHM - 11A TO-220/TO-220FP/D2PAK/I2PAK mdmesh POWER MOSFET
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| File Size |
537.05K /
12 Page |
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ST Microelectronics
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| Part No. |
STB11NM80 STP11NM80
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mdmesh?power mosfet typical r ds (on) = 0.35 w low gate input resistance low input capacitance and gate charge description the mdmesh? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the comp... |
| Description |
N-CHANNEL 800 V - 0.35 OHM - 11 A TO-220/D2PAK mdmesh POWER MOSFET
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| File Size |
311.99K /
8 Page |
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ST Microelectronics
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| Part No. |
STB12NM50T4
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| OCR Text |
mdmesh?power mosfet (1)i sd 12 a, di/dt 400 a/s, v dd v (br)dss , t j t jmax. (*)limited only by maximum temperature allowed n typical r ds (on) = 0.30 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low inp... |
| Description |
N-CHANNEL 500V - 0.30 OHM - 12A TO-220/TO-220FP/D2PAK/I2PAK mdmesh POWER MOSFET
N-CHANNEL 500V - 0.30 OHM - 12A TO-220/TO-220FP/D2PAK/I2PAK mdmesh POWER MOSFET
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| File Size |
528.73K /
12 Page |
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ST Microelectronics
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| Part No. |
STB20NM50T4
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| OCR Text |
...- 20a to-220/fp/d 2 pak/i 2 pak mdmesh? mosfet typical r ds (on) = 0.20 ? high dv/dt and avalanche capabilities 100% avalanche tested low input capacitance and gate charge low gate input resistance tight process control and high... |
| Description |
N-CHANNEL 550V @ Tjmax - 0.20 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK mdmesh MOSFET
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| File Size |
339.56K /
12 Page |
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ST Microelectronics
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| Part No. |
STB20NM50 STB20NM50-1 STP20NM50FP
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| OCR Text |
mdmesh?power mosfet n typical r ds (on) = 0.20 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitance and gate charge n low gate input resistance n tight process control and high manufacturing yields desc... |
| Description |
N-CHANNEL 500V - 0.20 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK mdmesh POWER MOSFET
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| File Size |
537.30K /
12 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB20NM60-1 STB20NM60T4 STP20NM60 STP20NM60FP
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| OCR Text |
mdmesh?power mosfet (1)i sd 20a, di/dt 400a/s, v dd v (br)dss ,t j t jmax. (*)limited only by maximum temperature allowed 1 2 3 1 3 1 2 3 to-220 to-220fp i 2 pak d 2 pak n typical r ds (on) = 0.25 w n high dv/dt and avalanche capabiliti... |
| Description |
N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK mdmesh POWER MOSFET
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| File Size |
540.02K /
12 Page |
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ST Microelectronics
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| Part No. |
STB21NM50N
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| OCR Text |
... 2 pak/to-247 second generation mdmesh? mosfet table 1: general features 100% avalanche tested low input capacitance and gate charge low gate input resistance description the stx21nm50n is realized with the second generation of mdme... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
436.95K /
16 Page |
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it Online |
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