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				Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers BSI ETC[ETC] Brilliance Semiconductor
Part No.	BS616LV1623 BS616LV1623TC BS616LV1623TC-55 BS616LV1623TC-70 BS616LV1623TCG55 BS616LV1623TCG70 BS616LV1623TCP55 BS616LV1623TCP70 BS616LV1623TI BS616LV1623TI-55 BS616LV1623TI-70 BS616LV1623TIG55 BS616LV1623TIG70 BS616LV1623TIP55 BS616LV1623TIP70
OCR Text	...tor, Inc. reserves the right to modify document contents without notice. R0201-BS616LV1623 1 Revision 1.1 Jan. 2004 BSI PIN DESCRIPTIONS BS616LV1623 Name A0-A19 Address Input SAE Address Input CIO x8/x16 select input Fu...
Description	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
File Size	254.16K / 10 Page	View it Online	Download Datasheet

				Brilliance Semiconducto... BSI[Brilliance Semiconductor]
Part No.	BS616LV2010 BS616LV2010EC BS616LV2010EI
OCR Text	...ctor Inc. reserves the right to modify document contents without notice. R0201-BS616LV2010 1 Revision 2.2 April. 2001 BSI PIN DESCRIPTIONS BS616LV2010 Name A0-A16 Address Input CE Chip Enable Input Function These 17 ad...
Description	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
File Size	192.79K / 9 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor] Brilliance Semiconducto...
Part No.	BS616LV2011 BS616LV2011AC BS616LV2011AI BS616LV2011DC BS616LV2011DI BS616LV2011EC BS616LV2011EI BS616LV2011TI BS616LV2011TC
OCR Text	...ctor Inc. reserves the right to modify document contents without notice. R0201-BS616LV2011 48-ball BGA top view 1 Revision 2.5 April 2002 BSI PIN DESCRIPTIONS BS616LV2011 Name A0-A16 Address Input CE Chip Enable Input ...
Description	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
File Size	234.26K / 11 Page	View it Online	Download Datasheet

				ELAN Microelectronics Corp
Part No.	EM78P447 EM78P447S EM78P447SA EM78P447SB
OCR Text	.... * Any instruction which would modify the contents of R2 (e.g. "ADD R2, A", "MOV R2, A", "BC R2, 6",......) will cause the ninth bit and the tenth bits (A8~A9) of the PC to be cleared. Thus, the computed jump is limited to the first 256 lo...
Description	8-bit microprocessor with low-power and high-speed CMOS technology
File Size	132.78K / 27 Page	View it Online	Download Datasheet

				ELAN Microelectronics Corp EMC
Part No.	EM78P458 EM78P459 EM78P458AM EM78P459AM EM78P459AK EM78P458AP
OCR Text	...ed. Any instruction which would modify the contents of R2 (e.g. "ADD R2, A", "MOV R2, A", "BC R2, 6",........) will cause the ninth bit and the tenth bit (A8~A9) of the PC to be cleared. Thus, the computed jump is limited to the first 256 l...
Description	8-bit microprocessors with low-power and high-speed CMOS technology
File Size	258.12K / 44 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FAN8039BD3 FAN8039BD3TF
OCR Text	... Pin#3 or #25 can be used to modify the gain. The output stage is the balanced transformerless(BTL) driver. The bias voltage VP is described as follows. 62K V P = ( VCC - V BE - V CE ( SAT ) ) x --------------------------- + V CE ( SAT ...
Description	4CH BTL Driver 1CH DC Motor Driver From old datasheet system 5-CH Motor Driver
File Size	289.28K / 16 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...m read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address CAS to output in Low-Z Output buffer turn-off delay from CAS OE to output in Low-Z Transition time (rise and f...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...m read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address CAS to output in Low-Z Output buffer turn-off delay Transition time (rise and fall) RAS precharge time RAS pul...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

				ETC
Part No.	ZR36015 ZR36015PQC-30
OCR Text	...E mode. The Soft Reset does not modify the internal registers of the ZR36015, except for the GO bit in the Mode Register (which is cleared). After a soft reset, the ZR36015 will be in the IDLE state. To start a new process, the GO bit in th...
Description	RASTER TO BLOCK CONVERTER
File Size	164.91K / 27 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
OCR Text	...0C/CL Series Read, Write, Read-modify-Write and Refresh Cycles (Common parameters) HM514400B/BL, HM514400C/CL -6 Parameter Random read or write cycle time RAS precharge time RAS pulse width CAS pulse width Row address setup time Row addre...
Description	1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
File Size	231.12K / 27 Page	View it Online	Download Datasheet

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