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				TOSHIBA[Toshiba Semiconductor]
Part No.	2SA2061
OCR Text	...ol VCBO VCEO VEBO IC ICP IB PC (note) Tj Tstg Rating -20 -20 -7 -2.5 -4.0 -250 1000 625 150 -55 to 150 Unit V V V A mA mW C C JEDEC JEITA TOSHIBA 2-3S1A Weight: 0.01 g (typ.) note: Mounted on FR4 board (glass epoxy, 1.6 mm thi...
Description	Silicon PNP Epitaxial Type
File Size	167.29K / 5 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MSR0860AJ3
OCR Text	...stance, junction-to-ambient (note 1) 50 maximum thermal resistance, junction-to-ambient (note 2) r th,j-a 110 c/w note : 1. when device mounted on 1 in 2 fr-4 board with 2 oz. copper, in a still air environment with t a =...
Description	8Amp. Superfast High Voltage Rectifiers
File Size	219.06K / 6 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	2SA2069
OCR Text	...ol VCBO VCEO VEBO IC ICP IB PC (note 1) Tj Tstg Rating -20 -20 -7 -1.5 -2.5 -150 2.0 1.0 150 -55 to 150 Unit V V V A mA W C C JEDEC JEITA TOSHIBA SC-62 2-5K1A note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645...
Description	High-Speed Switching Applications DC-DC Converter Applications
File Size	194.91K / 5 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	2SA2070
OCR Text	...ol VCBO VCEO VEBO IC ICP IB PC (note) Tj Tstg Rating -50 -50 -7 -1.0 -2.0 -0.1 1.0 2.0 150 -55 to 150 Unit V V V A A W C C JEDEC JEITA TOSHIBA SC-62 2-5K1A note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 m...
Description	TOSHIBA Transistor Silicon PNP Epitaxial Type
File Size	131.46K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FCB20N60F
OCR Text	... (note 1) 60 a v gss gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 690 mj i ar avalanche current ...
Description	N-Channel SuperFETFRFETMOSFET 600V, 20A, 190m
File Size	341.68K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FCA20N60F
OCR Text	... a i dm drain current - pulsed (note 1) 60 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 690 mj i ar avalanche current (note 1) 20 a e ar repetitive avalanche energy (note 1) 20.8 mj dv/dt peak diode recov...
Description	N-Channel SuperFETFRFETMOSFET 600V, 20A, 190m
File Size	1,187.33K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FCA20N60F109
OCR Text	... a i dm drain current - pulsed (note 1) 60 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 690 mj i ar avalanche current (note 1) 20 a e ar repetitive avalanche energy (note 1) 20.8 mj dv/dt peak diode recov...
Description	Discrete MOSFET
File Size	950.45K / 9 Page	View it Online	Download Datasheet

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