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  power transistor 90 -10v 3a Datasheet PDF File

For power transistor 90 -10v 3a Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    BB-B3171-C BB-B5171-C BB-B5174 BB-B6174 BB-B6171-C BB-B2171-C BB-B2174 BB-B4171-C BB-B4571-C BB-B4574

Yellow Stone Corp
Part No. BB-B3171-C BB-B5171-C BB-B5174 BB-B6174 BB-B6171-C BB-B2171-C BB-B2174 BB-B4171-C BB-B4571-C BB-B4574
Description Yellow, 3V-10v, Blinking LED lamp (round type)
Bright red, 3V-10v, Blinking LED lamp (round type)
Super red, 3V-10v, Blinking LED lamp (round type)
Green, 3V-10v, Blinking LED lamp (round type)
Orange., 3V-10v, Blinking LED lamp (round type)
Hi-eff red, 3V-10v, Blinking LED lamp (round type)

File Size 113.61K  /  1 Page

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    REF01CJ REF01CS REF01AJ REF01AZ REF01HJ REF01HP REF01HZ REF01EJ REF01EZ REF01RE_883 REF01J REF01CP REF01CZ REF01Z REF01

AD[Analog Devices]
Analog Devices, Inc.
Part No. REF01CJ REF01CS REF01AJ REF01AZ REF01HJ REF01HP REF01HZ REF01EJ REF01EZ REF01RE_883 REF01J REF01CP REF01CZ REF01Z REF01 REF-01 REF01RE/883
Description     10V Precision Viltage Reference
10V Precision Voltage Reference
DL CENTER MTG POL POST 4 POST
10V Precision Viltage Reference 10V的精密Viltage参
10V Precision Viltage Reference 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, MBCY8
10 V Precision Voltage Reference

File Size 296.22K  /  7 Page

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    IRG4BC30W-S IRG4BC30WS

IRF[International Rectifier]
Part No. IRG4BC30W-S IRG4BC30WS
Description INSULATED GATE BIPOLAR transistor(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)

File Size 174.32K  /  8 Page

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    APEM SA
Part No. OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 OC71 ACY35 ACY39 ASY80 ASY81 ASY76 ASY77 2N166 2N1731 ACY40
Description transistor | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1
transistor | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1
transistor | BJT | PNP | 10MA I(C) | TO-1
transistor | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1
transistor | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1
transistor | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1
transistor | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1
transistor | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1
transistor | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1
transistor | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
transistor | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5
transistor | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5
transistor | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5
transistor | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5
68HC11/Bidirectional-Compatible µP Reset Circuit
transistor | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五(巴西)总裁| 500mA的一(c)|

File Size 327.81K  /  4 Page

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    TY Semiconductor Co., L...
Part No. SI9410DY
Description VDS (V) = 30V ID = 7 A (VGS = 10V) RDS(ON) 0.03 (VGS = 10V)

File Size 404.40K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. KO3404
Description VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 28 m (VGS = 10V)

File Size 105.82K  /  2 Page

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    2SC4094 2SC4094NE68139E 2SC4094RCF 2SC4094RCG 2SC4094R38 2SC4094-T1 2SC4094-T2 2SC4094R-T2

NEC, Corp.
NEC Corp.
Part No. 2SC4094 2SC4094NE68139E 2SC4094RCF 2SC4094RCG 2SC4094R38 2SC4094-T1 2SC4094-T2 2SC4094R-T2
Description transistor | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR 晶体管|晶体管|叩| 10V的五(巴西)总裁| 65MA一(c)|的SOT - 143RVAR
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL transistor 4 PINS MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-power µP Reset Circuits
For amplify microwave and low noise.

File Size 100.38K  /  8 Page

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    55GN01CA 55GN01CA12 ENA1111A

ON Semiconductor
Sanyo Semicon Device
Part No. 55GN01CA 55GN01CA12 ENA1111A
Description RF transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP
UHF Wide-band Low-noise Amplifier Applications

File Size 396.42K  /  8 Page

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    Hamamatsu Photonics
Part No. S3902 S3903 S3903-1024Q S3903-512Q
Description MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P

File Size 217.07K  /  6 Page

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    SGS Thomson Microelectronics
Part No. BUH417
Description V(cbo): 1700V; V(ceo): 700V; V(ebo): 10V; 7A; 55W; CRT horizontal deflection high voltage NPN fast switching transistor
transistor | BJT | NPN | 700V V(BR)CEO | 7A I(C) | TO-218

File Size 262.79K  /  5 Page

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