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FBR2501 TK10417M MV5074C 160432 T83C51 HFU37H TK10417M LTC17
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    BM520Q25F

Rohm
Part No. BM520Q25F
OCR Text ...vlo1 12.5 13.5 14.5 v vcc rising up vcc uvlo voltage 2 v uvlo2 7.5 8.2 8.9 v vcc falling down vcc uvlo hysteresis v uvlo3 - 5.3 - v v uvlo3 = v uvlo1 - v uvlo2 vcc ovp trigger voltage v ovp1 25.0 27.5 30.0 v vc...
Description AC/DC Controller IC

File Size 666.03K  /  18 Page

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    HY5DU573222AFM-33 HY5DU573222AFM-36 HY5DU573222AFM HY5DU573222AFM-25 HY5DU573222AFM-28 HY5DU573222AFM-4

Hynix Semiconductor
Part No. HY5DU573222AFM-33 HY5DU573222AFM-36 HY5DU573222AFM HY5DU573222AFM-25 HY5DU573222AFM-28 HY5DU573222AFM-4
OCR Text ...s operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks inputs are sampled o...
Description 256M(8Mx32) GDDR SDRAM

File Size 653.78K  /  30 Page

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    MT8941AP MT8941APR

ZARLINK SEMICONDUCTOR INC
Part No. MT8941AP MT8941APR
OCR Text ...3 (c4b) at 4.096 mhz and has a rising edge in the frame pulse (f0b ) window. the high impedance state of this output is controlled by enc4o (pin 9). 12 14 v ss ground (0 volt) 28 pin plcc 24 pin pdip 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 1...
Description SPECIALTY TELECOM CIRCUIT, PQCC28

File Size 556.90K  /  24 Page

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    HMT451S6AFR8A

Hynix Semiconductor
Part No. HMT451S6AFR8A
OCR Text ...le d on the cross point of the rising edge of ck and falling edge of ck . a delay locked loop (dll) circuit is driven from the clock inputs and output timing for read operations is synchronized to the input clock. cke[1:0] in active hig...
Description DDR3L SDRAM

File Size 1,079.90K  /  56 Page

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    LTC4065L LTC4065LX

Linear Technology
Part No. LTC4065L LTC4065LX
OCR Text ...age EN Pin Input Resistance VCC rising VCC Falling RPROG = 1.33k, IPROG = 0.75mA RPROG = 13.3k, IPROG = 75A (VCC - VBAT), VCC Low to High (VCC - VBAT), VCC High to Low VEN rising VEN Falling 0.9 1.5 3.3 4065lxfa 2 U W ...
Description Standalone 250mA Li-Ion Battery Charger in 2 x 2 DFN

File Size 154.99K  /  16 Page

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    LTC4261 LTC4261IUFD

Linear Technology
Part No. LTC4261 LTC4261IUFD
OCR Text ..., SENSE, PGI, FLTIN = 3V VPGIO rising ELECTRICAL CHARACTERISTICS PARAMETER Shunt Regulator Voltage at VIN Shunt Regulator Load Regulation VIN Supply Current VIN Undervoltage Lockout Threshold VIN Undervoltage Lockout Hysteresis Inter...
Description Negative Voltage Hot Swap Controllers with ADC and I2C Monitoring

File Size 355.76K  /  32 Page

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    HMT351V7BMR4C-G7 HMT351V7BMR4C-H9 HMT112V7BFR8C-G7 HMT112V7BFR8C-H9 HMT351V7BMR8C-G7 HMT351V7BMR8C-H9 HMT125V7BFR4C-G7 H

HYNIX SEMICONDUCTOR INC
Part No. HMT351V7BMR4C-G7 HMT351V7BMR4C-H9 HMT112V7BFR8C-G7 HMT112V7BFR8C-H9 HMT351V7BMR8C-G7 HMT351V7BMR8C-H9 HMT125V7BFR4C-G7 HMT125V7BFR8C-G7 HMT125V7BFR4C-H9 HMT125V7BFR8C-H9
OCR Text ...masks write data-in at the both rising and falling edges of the data strobe * All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock * Programmable CAS latency 5, 6, 7, 8, 9, 10, a...
Description 240pin DDR3 SDRAM VLP Registered DIMM
256M X 72 DDR DRAM MODULE, DMA240

File Size 832.01K  /  29 Page

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    M13S128324A09 M13S128324A-4LG M13S128324A-4BG M13S128324A-5BG M13S128324A-3.6BG M13S128324A-6LG

Elite Semiconductor Memory Technology Inc.
Elite Semiconductor Mem...
Part No. M13S128324A09 M13S128324A-4LG M13S128324A-4BG M13S128324A-5BG M13S128324A-3.6BG M13S128324A-6LG
OCR Text ...pt data & DM are sampled at the rising edge of the system clock(CLK) Data I/O transitions on both edges of data strobe (DQS) DQS is edge-aligned with data for reads; center-aligned with data for WRITE Data mask (DM) for write masking only V...
Description 4M X 32 DDR DRAM, 0.7 ns, PQFP100
1M x 32 Bit x 4 Banks Double Data Rate SDRAM

File Size 958.01K  /  50 Page

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