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For samsungs Found Datasheets File :: 418 Search Time::1.86ms
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				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6T0808C1D-RL55 K6T0808C1D-TP70 K6T0808C1D-TL55 K6T0808C1D-TL70 K6T0808C1D-DL55 K6T0808C1D-DL70 K6T0808C1D-GB55 K6T0808C1D-GF70 K6T0808C1D-F K6T0808C1D-GB70 K6T0808C1D-GL55 K6T0808C1D-GL70 K6T0808C1D-GP70 K6T0808C1D-L K6T0808C1D-P K6T0808C1D-RB55 K6T0808C1D-RB70 K6T0808C1D-RF70 K6T0808C1D-RL70 K6T0808C1D-RP70 K6T0808C1D-TB55 K6T0808C1D-TB70 K6T0808C1D-TF70 K6T0808C1D-B K6T0808C1D-DB55 K6T0808C1D-DB70
OCR Text	...8C1D families are fabricated by samsungs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data re...
Description	32K X 8 STANDARD SRAM, 70 ns, PDSO28 32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM D2 - GLENAIR 32Kx8位低功耗CMOS静态RAM
File Size	169.00K / 9 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K7A803600B-QC14 K7A803600B-QC16 K7A803609B K7A803609B-QC25 K7A801800 K7A801800B-QC14 K7A801800B-QC16 K7B803625 K7B803625B-QC65 K7B803625B-QC75 K7A801809B-QC25 K7A801809B K7B801825B-QC65 K7A801809B-QCI25 K7B801825B-QC75 K7D801871B-HC25
OCR Text	...K7A801809B are fabricated using samsungs high performance CMOS technology and is available in a 100pin TQFP and Multiple power and ground pins are utilized to minimize ground bounce. FAST ACCESS TIMES PARAMETER Cycle Time Clock Access T...
Description	256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256Kx36 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256Kx36 & 512Kx18 SRAM
File Size	397.77K / 18 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K7A803601M K7A801801M K7A801809B K7A803609B
OCR Text	...K7A801801M are fabricated using samsungs high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to minimize ground bounce. FAST ACCESS TIMES PARAMETER Cycle Time Clock Acc...
Description	256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
File Size	465.04K / 17 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	DSK7N163601A K7N163601 K7N163601A-QFCI13 K7N163601A-QFCI16 K7N163601A-QFCI20 K7N163601A-QFCI25 K7M163625A-QCI65 K7M163625A-QCI75 K7N161801A-QFCI13 K7N161801A-QFCI16 K7N161801A-QFCI20 K7N161801A-QFCI25 K7N163645A-QFCI13 K7N163645A-QFCI16 K7N163645A-QFCI20 K7N163645A-QFCI25 K7N161845A-QFCI13 K7N161845A-QFCI16 K7N161845A-QFCI20 K7N161845A-QFCI25 K7M161825A-QCI65/75 K7M161825A-QCI75 K7M321825M K7N161801A-QFCI25/20/ K7N163645A-Q_FC_I25 DS_K7N163601A K7M161825A-QC_I65 K7M161825A-QC_I65_75 K7M161825A-QC_I75 K7M163625A-QC_I65 K7M163625A-QC_I75 K7N161801A-Q_FC_I13 K7N161801A-Q_FC_I16 K7N161801A-Q_FC_I20 K7N161801A-Q_FC_I25 K7N161801A-Q_FC_I25_20_ K7N161845A K7N161845A-Q_FC_I13 K7N161845A-Q_FC_I16 K7N161845A-Q_FC_I20 K7N161845A-Q_FC_I25 K7N163601A-Q_FC_I13 K7N163601A-Q_FC_I16 K7N163601A-Q_FC_I20 K7N163601A-Q_FC_I25 K7N163645A K7N163645A-Q_FC_I13 K7N163645A-Q_FC_I16 K7N163645A-Q_FC_I20
OCR Text	...K7N161801A are implemented with samsungs high performance CMOS technology and is available in 100pin TQFP and 165FBGA packages. Multiple power and ground pins minimize ground bounce. FAST ACCESS TIMES PARAMETER Cycle Time Clock Access T...
Description	1Mx36 & 2Mx18 Flow-Through NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM
File Size	277.57K / 24 Page	View it Online	Download Datasheet

				http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K6X4008C1F K6X4008C1F-B K6X4008C1F-BB55 K6X4008C1F-BB70 K6X4008C1F-BF55 K6X4008C1F-BF70 K6X4008C1F-DB55 K6X4008C1F-DB70 K6X4008C1F-DF55 K6X4008C1F-DF70 K6X4008C1F-F K6X4008C1F-GB55 K6X4008C1F-GB70 K6X4008C1F-GF55 K6X4008C1F-GF70 K6X4008C1F-GQ55 K6X4008C1F-GQ70 K6X4008C1F-MB55 K6X4008C1F-MB70 K6X4008C1F-MF55 K6X4008C1F-MF70 K6X4008C1F-Q K6X4008C1F-VB55 K6X4008C1F-VB70 K6X4008C1F-VF55 K6X4008C1F-VF70 K6X4008C1F-VQ55 K6X4008C1F-VQ70
OCR Text	...8C1F families are fabricated by samsungs advanced full CMOS process technology. The families supports various operating temperature range and various package types for user flexibility of system design. The families also support low data re...
Description	48 RECP WIRE SPLICE BLUE PTSE CON 20 SKT (16-20) Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size (AWG):6-4 RoHS Compliant: Yes 97-3102A18-1S Circular Connector; Body Material:Composite; Series:RADSOK; Number of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Connector Type:Circular; Gender:Receptacle; Wire Size (AWG):10-8 Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size (AWG):10-8 RoHS Compliant: Yes 512Kx8 bit Low Power full CMOS Static RAM 512Kx8位充分的CMOS低功耗静态存储器 PTSE CON 20 SKT (16-20) 512Kx8位充分的CMOS低功耗静态存储器
File Size	175.91K / 9 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6X4008T1F K6X4008T1F-B K6X4008T1F-F K6X4008T1F-GB55 K6X4008T1F-GB70 K6X4008T1F-GB85 K6X4008T1F-GF55 K6X4008T1F-GF70 K6X4008T1F-GF85 K6X4008T1F-GQ70 K6X4008T1F-GQ85 K6X4008T1F-MB55 K6X4008T1F-MB70 K6X4008T1F-MB85 K6X4008T1F-MF55 K6X4008T1F-MF70 K6X4008T1F-MF85 K6X4008T1F-Q K6X4008T1F-VB55 K6X4008T1F-VB70 K6X4008T1F-VB85 K6X4008T1F-VF55 K6X4008T1F-VF70 K6X4008T1F-VF85 K6X4008T1F-VQ70 K6X4008T1F-VQ85 K6X4008T1F-YB55 K6X4008T1F-YB70 K6X4008T1F-YB85 K6X4008T1F-YF55 K6X4008T1F-YF70 K6X4008T1F-YF85 K6X4008T1F-YQ70 K6X4008T1F-YQ85
OCR Text	...8T1F families are fabricated by samsungs advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low dat...
Description	Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Aluminum; Series:165; Number of Contacts:12; Connecting Termination:Solder; Circular Shell Style:Cable Plug; Circular Contact Gender:Socket; Current Rating:7.5A 512Kx8位低功耗和低电压的CMOS静态RAM PT05SE18-32S 512Kx8位低功耗和低电压的CMOS静态RAM 512Kx8 bit Low Power and Low Voltage CMOS Static RAM 512Kx8位低功耗和低电压的CMOS静态RAM D38999/26WA98SN
File Size	172.78K / 9 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4S641632H K4S640832H-UC75 K4S640432H-UC75 K4S640432H-TC K4S640832H-TL75 K4S641632H-UL75 K4S640432H-UC K4S640432H-UL75 K4S640832H-UL75 K4S641632H-UL60 K4S641632H-UL70 K4S641632H-TC75 K4S641632H-TC70 K4S641632H-TC60
OCR Text	...rds by 16 bits, fabricated with samsungs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, prog...
Description	64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64芯片与内存规格铅54 TSOP-II免费 DELTA CONN 14POS PLUG W/O INSERT DELTA CONN 14 POS PLUG BAIL LOCK
File Size	142.44K / 14 Page	View it Online	Download Datasheet

				http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Nihon Dempa Kogyo Co., Ltd. Samsung Semiconductor Co., Ltd.
Part No.	K6T4008U1C-VF10 K6T4008V1C K6T4008U1C-MF10 K6T4008U1C-YB70 K6T4008U1C-YF10 K6T4008V1C-VF70 K6T4008V1C-GF70 K6T4008V1C-YF70 K6T4008U1C-VB70 K6T4008V1C-MF70 K6T4008V1C-YB70 K6T4008V1C-YF85 K6T4008U1C-B K6T4008U1C-F K6T4008U1C-GB10 K6T4008U1C-GB70 K6T4008U1C-GB85 K6T4008U1C-GF10 K6T4008U1C-GF70 K6T4008U1C-GF85 K6T4008U1C-MB10 K6T4008U1C-MB70 K6T4008U1C-MB85 K6T4008U1C-MF70 K6T4008U1C-MF85 K6T4008U1C-TB10 K6T4008U1C-TB70 K6T4008U1C-TB85 K6T4008U1C-TF10 K6T4008U1C-TF70 K6T4008U1C-TF85 K6T4008U1C-VB10 K6T4008U1C-VB85 K6T4008U1C-VF70 K6T4008U1C-VF85 K6T4008U1C-YB10 K6T4008U1C-YB85 K6T4008U1C-YF70 K6T4008U1C-YF85 K6T4008V1C-B K6T4008V1C-F K6T4008V1C-GB70 K6T4008V1C-GB85 K6T4008V1C-GF85 K6T4008V1C-MB70 K6T4008V1C-MB85 K6T4008V1C-MF85 K6T4008V1C-TB70 K6T4008V1C-TB85 K6T4008V1C-TF70 K6T4008V1C-TF85 K6T4008V1C-VB70 K6T4008V1C-VB85 K6T4008V1C-VF85 K6T4008V1C-YB85
OCR Text	...8U1C families are fabricated by samsungs advanced CMOS process technology. The families support various operating temperature range and have various package type for user flexibility of system design. The families also support low data rete...
Description	POT 250K OHM 3/8 SQ CERM SL ST POT 25K OHM 3/8 SQ CERM SL ST 512Kx8 bit Low Power and Low Voltage CMOS Static RAM 512Kx8位低功耗和低电压的CMOS静态RAM
File Size	185.50K / 10 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM718FV4021H-5 KM718FV4021H-6 KM718FV4021H-7 KM736FV4021 KM736FV4021H-5 KM736FV4021H-6 KM736FV4021H-7 KM718FV4021
OCR Text	...f 18 bits)and is implemented in samsungs advanced CMOS technology. Single differential PECL level K clocks are used to initiate the read/write operation and all internal operations are self-timed. At the rising edge of K clock, All addresse...
Description	(KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
File Size	348.54K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4E641612C-TL45 K4E661612C-TL45 K4E641612C-60 K4E641612C-TC50 K4E641612C-45 K4E641612C-50 K4E641612C-L K4E641612C-T K4E641612C-T45 K4E641612C-T50 K4E641612C-T60 K4E641612C-TC K4E641612C-TC45 K4E641612C-TC60 K4E641612C-TL50 K4E641612C-TL60 K4E661612C K4E661612C-45 K4E661612C-50 K4E661612C-60 K4E661612C-L K4E661612C-L45 K4E661612C-L50 K4E661612C-L60 K4E661612C-T K4E661612C-T45 K4E661612C-T50 K4E661612C-T60 K4E661612C-TC K4E661612C-TC45 K4E661612C-TC50 K4E661612C-TC60 K4E661612C-TL50 K4E661612C-TL60 K4E641612C
OCR Text	...DRAM family is fabricated using samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES * Part Identification - K4E661612C-TC/L(3.3V, 8K Ref.) - K4E641612C-TC/L(3.3V, 4K Ref.) * Ex...
Description	4M x 16bit CMOS Dynamic RAM with Extended Data Out
File Size	882.29K / 36 Page	View it Online	Download Datasheet

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