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				International Rectifier
Part No.	IRF2204
OCR Text	... 0 25 50 75 100 125 150 175 starting Tj, Junction Temperature ( C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD VGS(th) Gate threshold Voltage (V) ...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25, peak IAS = 8.1A. See Figures 15, 16. 5-3 IRF234, IRF235, IRF236, IRF237 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) ...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	...mH , RG = 25W , Peak IL = 22A , starting TJ = 25C 3) @ ISD 13.9A , di/dt 150A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 9.1W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: htt...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25, peak IAS = 14A. See Figures 15, 16. 5-3 IRF244, IRF245, IRF246, IRF247 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) U...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF250SMD
OCR Text	...mH , RG = 25W , Peak IL = 22A , starting TJ = 25C 3) @ ISD 22A , di/dt 190A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 2.35W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http...
Description	N.CHANNEL POWER MOSFET
File Size	23.37K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804S-7P
OCR Text	...ee fig. 11). Limited by TJmax, starting TJ = 25C, L=0.049mH, RG = 25, IAS = 160A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging ...
Description	AUTOMOTIVE MOSFET
File Size	260.32K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	...ee fig. 11). Limited by TJmax, starting TJ = 25C, L=0.24mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD 75A, di/dt 220A/s, VDD V(BR)DSS, TJ 175C. Pulse width 1.0ms; duty cycle 2%. Coss eff. ...
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2805L IRF2805S
OCR Text	...n temperature. (See fig. 11). R starting TJ = 25C, L = 0.08mH RG = 25, IAS = 104A. (See Figure 12). S ISD 104A, di/dt 240A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2%. Parameter Continuous Source Current (Body Diode)...
Description	55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	221.43K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text	...ion temperature. (See fig. 11) starting TJ = 25C, L = 370H RG = 25, IAS = 43A, VGS=10V (See Figure 12) ISD 43A, di/dt 300A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. This is a typical value at device destruction ...
Description	HEXFET Power MOSFET HEXFET功率MOSFET 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	122.50K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2807
OCR Text	...ation outside rated limits. starting TJ = 25C, L = 370H RG = 25, IAS = 43A, VGS=10V (See Figure 12) ISD 43A, di/dt 300A/s, VDD V(BR)DSS, TJ 175C This is a calculated value limited to TJ = 175C . Calculated continuous curr...
Description	Power MOSFET(Vdss=75V, Id=82A?) Power MOSFET(Vdss=75V, Id=82A)
File Size	149.88K / 8 Page	View it Online	Download Datasheet

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