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For tcc Found Datasheets File :: 1189    Search Time::0.797ms    
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    K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L70 K4S640832C-TC/L80
OCR Text ...(min) IOL = 0 mA CKE VIL(max), tcc = 15ns CAS Latency CMOS SDRAM Version -70 75 -80 75 -1H -1L 70 1 1 12 70 -10 65 Unit Note Operating current (One bank active) Precharge standby current in power-down mode ICC1 ICC2P m...
Description 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 128.76K  /  11 Page

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    K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K4S640832D-TC/L1H K4S640832D-TC/L1L K4S640832D-TC/L75 K4S640832D-TC/L80
OCR Text ...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns Test Condition CMOS SDRAM Version - 75 - 80 - 1H - 1L -10 Unit Note Operating current (One bank active) Precharge standby current in power-down mode ICC1 ICC2P 75 75 70 1...
Description 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 127.15K  /  10 Page

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    VJ0505D1ROBLPAT VJ0505D1ROBLLAC VJ0505D1ROBLBAT VJ0505D1ROBLBAC VJ0505D1ROBLCAC VJ0505D1ROBLCAT VJ0505D1ROBLDAC VJ0505D1

Vishay Siliconix
Part No. VJ0505D1ROBLPAT VJ0505D1ROBLLAC VJ0505D1ROBLBAT VJ0505D1ROBLBAC VJ0505D1ROBLCAC VJ0505D1ROBLCAT VJ0505D1ROBLDAC VJ0505D1ROBLDAT VJ0505D1ROBLGAC VJ0505D1ROBLLAT VJ0505D1ROKLBAC VJ0505D1ROKLCAC VJ0505D1ROKLPAT VJ0505D1ROKLDAT VJ0505D1ROKLGAC VJ0505D1ROKLLAC VJ0505D1ROKLBAT VJ0505D1ROKLCAT VJ0505D1ROKLDAC VJ0505D1ROKLRAC VJ0505D1ROGXLAT VJ0505D1ROGXLAC VJ0505D1ROMXPAT VJ0505D1ROMXPAC VJ0505D1ROMXLAC VJ0505D1ROMXLAT VJ0505D1ROGXRAC VJ0505D1ROKXRAC VJ0505D1RODXRAC VJ0505D1ROMXRAC VJ0505D1ROBXRAC VJ0505D1ROFXRAC VJ0505D1ROJXRAC VJ0505D1ROKXCAC VJ0505D1ROKXCAT VJ0505D1ROJXDAC VJ0505D1ROBXLAC VJ0505D1ROCXLAC VJ0505D1RODXLAC VJ0505D1ROFXLAC VJ0505D1ROCXDAC VJ0505D1ROCXDAT VJ0505D1ROFLLAT VJ0505D1ROJLCAC VJ0505D1ROJLRAC VJ0505D1ROJLBAC VJ0505D1ROJLBAT VJ0505D1ROJLPAC VJ0505D1ROJLDAC VJ0505D1ROJLCAT VJ0505D1ROJLGAC VJ0505D1RODLBAT VJ0505D1ROCXCAC VJ0505D1ROKXDAT VJ0505D1ROCLBAC VJ0505D1ROCLBAT VJ0505D1ROFXGAC VJ0505D1ROFXPAC VJ0505D1ROFXDAT VJ0505D1ROFXBAT VJ0505D1ROFXBAC VJ0505D1ROFXDAC VJ0505D1ROFXLAT VJ0505D1ROFXCAC VJ0505D1ROCLLAT VJ0505D1ROCLLAC VJ0505D1ROMLCAT VJ0505D1ROMLPAT VJ0505D1ROMLPAC VJ0505D1ROMLBAC VJ0505D1ROMLBAT VJ0505D1ROMLDAT VJ0505D1ROMLGAC VJ0505D1ROMLCAC VJ0505D1ROMLLAC
OCR Text ...ure coefficient of capacitance (tcc): c0g (d): 0 ppm/c 30 ppm/c from - 55 c to + 125 c with zero (0) v dc applied dissipation factor (df): c0g (d): 0.05 % max. at 1.0 v rms and 1 mhz ? for values ? 1000 pf c0g (d): 0.05 % max. at 1.0 ...
Description MULTILAYER CERAMIC CHIP CAPACITORS
   MULTILAYER CERAMIC CHIP CAPACITORS

File Size 2,153.23K  /  2 Page

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    P13B16212A P13B16212V M464S3254DTS PC133 M464S3254DTS-L1H_C1H M464S3254DTS-L1L_C1L M464S3254DTS-L7A_C7A M464S3254DTS-L7C

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. P13B16212A P13B16212V M464S3254DTS PC133 M464S3254DTS-L1H_C1H M464S3254DTS-L1L_C1L M464S3254DTS-L7A_C7A M464S3254DTS-L7C_C7C M464S3254DTS-L1L/C1L M464S3254DTS-L7A/C7A M464S3254DTS-L1H/C1H M464S3254DTS-L7C/C7C
OCR Text ...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns CKE & CLK VIL(max), tcc = CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tcc = Input signals are stable CKE VIL(max), tcc =...
Description Protective Eyeglasses RoHS Compliant: NA
Personal protection, Spectacles; RoHS Compliant: NA
Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD

File Size 165.11K  /  11 Page

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    HEF4750VLSI HEF4750V HEF4750VD HEF4750VF

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. HEF4750VLSI HEF4750V HEF4750VD HEF4750VF
OCR Text ...esizer PINNING R V STB TCA TCB tcc TRA PC1 PC2 MOD OL OSC XTAL A0 to A9 NS0, NS1 OUT HEF4750V LSI phase comparator input, reference phase comparator input strobe input timing capacitor CA pin timing capacitor CB pin timing capacitor ...
Description Frequency synthesizer 频率合成

File Size 164.22K  /  17 Page

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    K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4S641632H K4S640832H-UC75 K4S640432H-UC75 K4S640432H-TC K4S640832H-TL75

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4S641632H K4S640832H-UC75 K4S640432H-UC75 K4S640432H-TC K4S640832H-TL75 K4S641632H-UL75 K4S640432H-UC K4S640432H-UL75 K4S640832H-UL75 K4S641632H-UL60 K4S641632H-UL70 K4S641632H-TC75 K4S641632H-TC70 K4S641632H-TC60
OCR Text ...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns CKE & CLK VIL(max), tcc = CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tcc = Input signals are stable CKE VIL(max), tcc =...
Description 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费(符合RoHS
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费(符合RoHS
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64芯片与内存规格铅54 TSOP-II免费
DELTA CONN 14POS PLUG W/O INSERT
DELTA CONN 14 POS PLUG BAIL LOCK

File Size 142.44K  /  14 Page

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    Vishay Draloric
Part No. P1005Y3010BBT100
OCR Text ...; 5 % ceramic dielectric ? r7 (tcc + 100 ppm/k) ? r16 (tcc + 100 ppm/k) ? r42 (tcc - 250 ppm/k) ? r85 (tcc - 750 ppm/k) ? r230 (tcc - 750 ppm/k) rated voltage ?11 kv p ?12 kv p ?13 kv p ?14 kv p ?15 kv p ?16 kv p dielectric strength test 2...
Description P. 70, P. 100, P. 140, P. 200 RF Power Plate Capacitors with Contoured Rim, Class 1 Ceramic

File Size 83.65K  /  5 Page

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    V58C3643204SAT

Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Part No. V58C3643204SAT
OCR Text ...th = 2 tRC S tRC(min) IOL= 0mA, tcc = tcc(min) CKE VIL(max), tcc = tcc(min) CKE VIH(min), CS S VIH(min), tcc = tcc(min) CKE VIL(max), tcc = tcc(min) CKE S VIH(min), CS S VIH(min), tcc = tcc(min) IOL = 0mA, tcc = tcc(min), Page Burst, All...
Description HIGH PERFORMANCE 3.3 VOLT 2M X 32 DDR SDRAM 4 X 512K X 32

File Size 94.83K  /  12 Page

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    Z16C0210VSC Z16C0110PSC

Zilog, Inc.
Part No. Z16C0210VSC Z16C0110PSC
OCR Text ...ons tda(mr) twch-20ns twmrh tcc-20ns tdmr(a) twci-20ns tddw(dsw) twch-25ns tdmr(dr) 2tcc-60ns tda(as) twch-20ns tdas(dr) 2tcg60ns tdds(as) twci-20ns twas twch-5n.s tdas(a) * twci-7ons tdas(dsr) twcens tddsr(dr) tcct...
Description CPU CENTRAL PROCESSING UNIT
Eight User-Selectable Addressing Modes

File Size 1,323.17K  /  14 Page

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    K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4S641632F-TC60 K4S641632F-TC75 K4S641632F-TL75 K4S641632F K4S641632F-TC

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4S641632F-TC60 K4S641632F-TC75 K4S641632F-TL75 K4S641632F K4S641632F-TC1H K4S641632F-TC1L K4S641632F-TC50 K4S641632F-TC55 K4S641632F-TL1H K4S641632F-TL1L K4S641632F-TL50 K4S641632F-TL60
OCR Text ...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are changed one time during 20ns CMOS SDRAM Version - 50 - 55 -60 - 70 - 75 -1H -1L Unit Note Operating current (One bank active) P...
Description RF CONNECTOR; FME PLUG, CRIMP ATTACHMENT FOR RG58
RF CONNECTOR; 75 OHM MCX JACK, SURFACE MOUNT
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL

File Size 132.29K  /  11 Page

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