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NXP Semiconductors N.V.
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| Part No. |
BUK72150-55a
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| OCR Text |
...et) in a plastic package using trenchmos technology. this product has been designed and qualified to the appropriate aec standard for use ...a connection to pin 2. 3. ordering information avalanche ruggedness e ds(al)s non-repetitive drai... |
| Description |
N-channel trenchmos standard level FET N沟道trenchmos标准电平场效应管
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| File Size |
166.74K /
13 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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| Part No. |
BUK9225-55a
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| OCR Text |
...et) in a plastic package using trenchmos technology. this product has been designed and qualified to the appropriate aec standard for use ...a p tot total power dissipation t mb =25c; see figure 2 -94w t stg storage temperature -55 175 c t ... |
| Description |
N-channel trenchmos logic level FET N沟道trenchmos逻辑电平场效应管
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| File Size |
183.17K /
13 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK953R2-40B
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| OCR Text |
trenchmos? logic level fet rev. 02 14 october 2002 product data 1. product pro?le 1.1 description n-channel enhancement mode ?eld-effect power transistor in a plastic package using philips high-performance automotive trenchmos? technology.... |
| Description |
TRaNSISTOR | MOSFET | N-CHaNNEL | 40V V(BR)DSS | 75a I(D) | TO-220aB 晶体管| MOSFET的| N沟道| 40V的五（巴西）直| 75a条（丁）| TO - 220aB现有
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| File Size |
131.14K /
15 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK7277-55a
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| OCR Text |
...et) in a plastic package using trenchmos technology. this product has been designed and qualified to the appropriate aec standard for use ...a i sm peak source current pulsed; t p 10 s; t mb =25c - 73 a avalanche ruggedness e ds(al)s non-re... |
| Description |
N-channel trenchmos standard level FET N沟道trenchmos标准电平场效应管
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| File Size |
176.95K /
13 Page |
View
it Online |
Download Datasheet |
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