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ufm Datasheet PDF File

For ufm Found Datasheets File :: 62 Search Time::0.922ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 |

					Toshiba Semiconductor
Part No.	SSM3K106TU
OCR Text	...m, Cu Pad: 645 mm ) Note: ufm JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold volta...
Description	Silicon N Channel MOS Type High-Speed Switching Applications
File Size	132.67K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	SSM3K105TU
OCR Text	..., Cu Pad: 645 mm2 ) Note: ufm JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold volt...
Description	Silicon N Channel MOS Type High Speed Switching Applications
File Size	465.42K / 5 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	SSM3K102TU
OCR Text	..., Cu Pad: 645 mm2 ) Note: ufm JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold volt...
Description	High Speed Switching Applications
File Size	138.12K / 5 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	SSM3K101TU
OCR Text	..., Cu Pad: 645 mm2 ) Note: ufm JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold volt...
Description	Silicon N Channel MOS Type High Speed Switching Applications
File Size	139.13K / 5 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	SSM3J120TU
OCR Text	...re mW C C 0.70.05 V ufm 1. Gate 2. Source 3. Drain Using continuously under heavy loads (e.g. the application of JEDEC high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause thi...
Description	Field Effect Transistor Silicon P Channel MOS Type Power Management Switch Applications High-Current Switching Applications
File Size	192.73K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	SSM3J118TU
OCR Text	...: 1: Gate 2: Source 3: Drain ufm JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold volta...
Description	Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications
File Size	126.01K / 5 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	SSM3J135TU
OCR Text	... 1: gate 2: source 3: drain ufm ssm3j135tu 2010-11-24 2 electrical characteristics (ta = 25c) characteristic symbol test conditions min typ. max unit v (br) dss i d = -1 ma, v gs = 0 v -20 ? ? v drain-source breakdown ...
Description	TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?
File Size	184.45K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	SSM3J133TU
OCR Text	...2-2u1a weight: 6.6 mg (typ.) ufm jjl 1 2 3 1 2 3 -0.05 1.70.1 2.10.1 0.650.05 1 2 2.00.1 3 0.70.05 +0.1 0.3 0.1660.05 1: gate 2: source 3: drain ssm3j133tu 2010-11-30 2 electrical characteristics (ta = 25c) characteristi...
Description	TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS?
File Size	181.13K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	SSM3J134TU
OCR Text	... 1: gate 2: source 3: drain ufm jjm 1 2 3 1 2 3 ssm3j134tu 2010-11-18 2 electrical characteristics (ta = 25c) characteristic symbol test conditions min typ. max unit v (br) dss i d = -1 ma, v gs = 0 v -20 ? ? v d...
Description	TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?
File Size	196.92K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	SSM3J117TU
OCR Text	..., Cu Pad: 645 mm2 ) Note: ufm JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold volta...
Description	Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications
File Size	126.38K / 5 Page	View it Online	Download Datasheet

For ufm Found Datasheets File :: 62 Search Time::0.922ms
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