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Intel, Corp.
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| Part No. |
TP28F010-90 TE28F010-150
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| OCR Text |
...000 erase/program cycles n 12.0 v 5% v pp n high-performance read ? 90 ns maximum access time n cmos low power consumption ? 10 ma typical active current ? 50 a typical standby current ? 0 watts data retention power n integrated program/era... |
| Description |
28F010 1024K (128K X 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
28F010 1024K (128K X 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
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| File Size |
884.01K /
33 Page |
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ROHM[Rohm]
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| Part No. |
RB021VA-90
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| OCR Text |
...0 0.2 5 125 -40 to +125
Unit V V A A
Electrical characteristic (Ta=25C) Parameter Symbol Min. Forward voltage VF Reverse current IR ...90
Diodes
Electrical characteristic curves
1000 100000 Ta=125 100 f=1MHz
FORWARD CURRENT:IF(mA... |
| Description |
Schottky barrier diode
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| File Size |
145.48K /
4 Page |
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ROHM[Rohm]
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| Part No. |
RB095T-90
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| OCR Text |
...0 6 100 150 -40 to +150
Unit V V A A
(*1)Tc=100max Per chip : Io/2
Electrical characteristic (Ta=25C) Parameter Symbol
Forward v...90
Diodes
Electrical characteristic curves
10 100000 10000 REVERSE CURRENT:IR(uA) FORWARD CURRENT... |
| Description |
Schottky barrier diode
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| File Size |
195.93K /
4 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
RB160L-90
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| OCR Text |
...
5.30.1 0.05 9.50.1
Unit V V A A
Forward voltage Reverse current
VF IR
-
Typ. -
Max. 0.73 100
Unit V A
Conditions IF=1.0A VR=90V
120.2
4.2
1/3
RB160L-90
Diodes
Electrical characteristic curves
Ta... |
| Description |
Schottky barrier diode
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| File Size |
150.86K /
4 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
RB205T-90
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| OCR Text |
... 90 15 100 150 -40 to +150 Unit V V A A
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. Typ. Max. 0.78 300 2.0 Unit V A /W Conditions IF=7.5A VR=90V junction to case
... |
| Description |
Schottky barrier diode
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| File Size |
194.93K /
4 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
RB215T-90
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| OCR Text |
... 20 100 150 -40 to +150
Unit V V A A
Forward characteristics Reverse characteristics Thermal impedance
VF IR jc
Min. -
Typ....90
Diodes
Electrical characteristic curves
100
FORWARD CURRENT:IF(mA)
1000000 100000
REVERSE... |
| Description |
Schottky barrier diode
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| File Size |
187.09K /
4 Page |
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it Online |
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Macronix International Co., Ltd.
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| Part No. |
27C4000-90
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| OCR Text |
...75v is applied, with vcc = 6.25 v and oe = vih (algorithm is shown in figure 1). the programming is achieved by applying a single ttl lo...90. (3) input pulse rise and fall times are < 10ns. ac driving levels
6 mx27c4000 rev. 3.8, aug. ... |
| Description |
4M-BIT [512K x8] CMOS EPROM 4分位[12k x8]的CMOS存储
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| File Size |
986.88K /
15 Page |
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it Online |
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Intersil, Corp.
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| Part No. |
X28HC64JIZ-90 X28HC64SZ-70
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| OCR Text |
... ? no external high voltages or v pp control circuits ?self-timed ?no erase before write ?no complex programming algorithms ?no overerase p...90* x28hc64j-90 0 to 70 90 32 ld plcc n32.45x55 x28hc64ji-90* x28hc64ji-90 -40 to 85 32 ld plcc n3... |
| Description |
5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 70 ns, PDSO28
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| File Size |
256.99K /
17 Page |
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it Online |
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Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SUD19N20-90
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| OCR Text |
V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
200
FEATURES
ID (A)
19 17.5
rDS(on) (W)
0.090 @ VGS = 10 V 0.105 @ VGS = 6 V
D T...90 S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Dra... |
| Description |
N-Channel 200-V (D-S) 175 °C MOSFET
N-Channel 200-V (D-S) 175C MOSFET
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| File Size |
38.55K /
4 Page |
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it Online |
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Price and Availability
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