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.701 Datasheet PDF File

For .701 Found Datasheets File :: 319206 Search Time::3.547ms
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				Fujitsu, Ltd. Fujitsu Component Limited.
Part No.	MBM29LV080A-70 MBM29LV080A-90 MBM29LV080A-70PTV MBM29LV080A-70PTR MBM29LV080A-12 MBM29LV080A-12PTR MBM29LV080A-12PTV MBM29LV080A-90PTR MBM29LV080A-90PTV
OCR Text	70/-90/-12 n n n n features ? address specification is not necessary during command sequence ? single 3.0 v read, program and erase minimize...1.0 second. (if already preprogrammed.) the device also features a sector erase architecture. the s...
Description	Low power audio DAC with PLL 1M X 8 FLASH 3V PROM, 70 ns, PDSO40 8M (1M x 8) BIT
File Size	241.39K / 49 Page	View it Online	Download Datasheet

				Execlics
Part No.	EFA025A-70
OCR Text	70 data sheet low distortion gaas power fet non-hermetic low cost ceramic 70mil package +20.0dbm typical output power 10.0db typical power gain at 12 ghz typical 1.5db noise figure and 10db associated gai...
Description	Low Distortion GaAs Power FET
File Size	60.88K / 2 Page	View it Online	Download Datasheet

				Fujitsu, Ltd. Fujitsu Component Limited.
Part No.	MBM29XL12DF-70 MBM29XL12DF-80
OCR Text	... 16/4m 32) bit mbm29xl12df -70/80 n description the mbm29xl12df is 128m-bit, 3.0 v-only page mode and dual operation flash memory organized as 8m words by 16 bits or 4m words by 32 bits. the device is offered in 90-pin ssop and 96-ball...
Description	PAGE MODE FLASH MEMORY CMOS 128M BIT 页面模式闪存的CMOS 128M的钻
File Size	496.07K / 91 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TC55W1600FT-70 TC55W1600FT TC55W1600FT-55
OCR Text	70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576...
Description	1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
File Size	198.22K / 13 Page	View it Online	Download Datasheet

				AMIC Technology
Part No.	A29800UV-70 A29800TV-70 A29800TV-90 A29800UV-90 A29800TV-55 A29800TM-55 A29800UM-55 A29800TM-70 A29800UM-70 A29800TM-90 A29800UM-90 A29800UV-55
OCR Text	... n access time s: - 55/70/90 (max.) n current: - 28ma read current (word mode) - 20 ma typical active read current (...1 m a typical cmos standby n flexible sector architecture - 16 kbyte/ 8 kbytex2/ 32 kbyte/...
Description	1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
File Size	514.38K / 34 Page	View it Online	Download Datasheet

				Honeywell International, Inc. NXP Semiconductors N.V.
Part No.	EPA230-TD-70 EPA230-TD-100 EPA230-TD-80 EPA230-TD-75 EPA230-TD-5
OCR Text	...erating free-air temperature 0 +70 ? recommended operating conditions min max unit package schematic 8 pin dip delayed pulse width generator...1.5v levels ** td is the delay time (in ns) from trigger pulse to the leading edge of the outpu...
Description	Logarithmic Digitally Controlled Potentiometer (XDCP™), Terminal Voltage ±5V, 100 Taps, Log Taper; Temperature Range: -40°C to 85°C; Package: 8-PDIP Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 8-PDIP Logarithmic Digitally Controlled Potentiometer (XDCP™), Terminal Voltage ±5V, 100 Taps, Log Taper; Temperature Range: 0°C to 70°C; Package: 8-PDIP Digitally Controlled Potentiometer (XDCP™); Temperature Range: 0°C to 70°C; Package: 8-PDIP Delay Line 延迟
File Size	16.07K / 2 Page	View it Online	Download Datasheet

				SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc.
Part No.	SST31LF043A-70-4C-WI SST31LF041-300-4E-WH SST31LF041A-300-4E-WH SST31LF043A-300-4E-WH SST31LF043-70-4C-WH SST31LF043-70-4C-WI SST31LF041-70-4E-WH SST31LF041-70-4E-WI SST31LF043-70-4E-WH SST31LF043-70-4E-WI SST31LF041-300-4E-WI SST31LF043-300-4E-WI SST31LF043A-300-4E-WI SST31LF041A-300-4E-WI SST31LF043A-70-4C-WH SST31LF043A-70-4E-WI SST31LF043A-70-4E-WH SST31LF041-70-4C-WH SST31LF041A-70-4C-WI SST31LF041A-70-4E-WI SST31LF041A-70-4C-WH SST31LF041A-70-4E-WH SST31LF043A-300-4C-WH
OCR Text	... Times: - SST31LF041/043 Flash: 70 ns SRAM: 70 ns - SST31LF041A/043A Flash: 300 ns SRAM: 300 ns * Flash Fast Erase and Byte-Program: - Secto...1 memory banks share common address lines, data lines, WE# and OE#. The memory bank selection is ...
Description	4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位的SRAM ComboMemory 4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位SRAM ComboMemory 4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PDSO32 XTAL MTL SMT HC49/USM 4 Mbit闪存1兆位56千位的SRAM ComboMemory XTAL CER SMT 7X5 2PAD 16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I²C Serial Interface 6-SOT-23 DIODE SWITCH 75V 350MW SOT-23 RECTIFIER SCHOTTKY SINGLE 5A 60V 175A-Ifsm 0.7Vf 0.5A-IR SMC 3K/REEL
File Size	299.73K / 26 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor
Part No.	DS1249AB-70
OCR Text	...ad and write access times of 70 ns ? lithium energy sou rce is electrically disconnected to retain freshness until power is applied...1 2 3 4 5 6 7 8 9 10 11 12 14 31 32 - pin encapsulated package 740- mi...
Description	2048k Nonvolatile SRAM
File Size	185.81K / 9 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Excelics Semiconductor, Inc.
Part No.	EPA018A-70
OCR Text	...AND HIGH RELIABILITY EPA018A-70 High Efficiency Heterojunction Power FET 20 D 44 19 4 180 Min. (All Leads) S S 40 G A...1.0mA -9 -6 f=12GHz f=18GHz f=12GHz f=18GHz f=12GHz f=12GHz f=12GHz 30 35 MIN 18.5 11.0 TYP 20.0 20....
Description	High Efficiency Heterojunction Power FET
File Size	19.02K / 2 Page	View it Online	Download Datasheet

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