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  0.073 Datasheet PDF File

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    TC3532 GRM39Y5V104Z25V

List of Unclassifed Manufacturers
ETC
Electronic Theatre Controls, Inc.
Part No. TC3532 GRM39Y5V104Z25V
OCR Text ...ency MIN 4.9 19 28 29 37 TYP 21 0.5 29 30 39 2:1 8 400 400 25 MAX 6 0.75 UNITS GHz dB dB dBm dBm dBm Volt mA mA % 450 a TRANSCOM, I...073 0 0.057 0.008 0.020 0.270 0.050 0.250 0.270 0.008 0.080 0.060 0.009 0.023 0.273 0.053 0.25...
Description 4.9 - 6 GHz 29dBm MMIC

File Size 150.94K  /  3 Page

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    2SC4093 2SC4093-T1 2SC4093-T2 2SC4093R28-T1 2SC4093R27-T1 2SC4093R26-T1 2SC4093RBH-T2 2SC4093R27-T2 2SC4093RBH-T1 2SC409

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SC4093 2SC4093-T1 2SC4093-T2 2SC4093R28-T1 2SC4093R27-T1 2SC4093R26-T1 2SC4093RBH-T2 2SC4093R27-T2 2SC4093RBH-T1 2SC4093R26-T2 2SC4093R28-T2 2SC4093RBF-T2 2SC4093RBG-T2 2SC4093RBF-T1 2SC4093NE85639E 2SC4093-T2-R26 2SC4093-T2-R27 2SC4093R-T1
OCR Text ...h-isolation gain. 2.90.2 (1.8) 0.85 0.95 PACKAGE DIMENSIONS (Units: mm) 0.4 -0.05 0.4 -0.05 0.4 0.16 -0.06 +0.1 2.8 -0.3 +0.2 1.5 -...073 0.094 0.103 0.127 0.137 0.165 0.170 S12 46.1 58.1 55.6 61.1 58.2 58.7 55.3 53.1 52.1 48.4 ...
Description    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits 晶体管|晶体管|叩| 12V的五(巴西)总裁| 100mA的一(c)|的SOT - 143VAR
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 微波低噪声放大器NPN硅外延晶体管4个引脚微型模
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-143VAR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
Discrete
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
For amplify high frequency and low noise.

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    ATF-21170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21170
OCR Text 0.5- 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features * Low Noise Figure: 0.9 dB Typical at 4 GHz * High Associat...073 .082 .095 .108 .127 .148 .172 S22 Ang. 67 59 44 34 31 24 19 12 7 0 -13 Mag. .49 .46 .40 .38 .36 ...
Description 0.5-6 GHz Low Noise Gallium Arsenide FET

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    ATF-44101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-44101
OCR Text 0 dBm Typical P 1 dB at 4 GHz * High Gain at 1 dB Compression: 8.5 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 35% Typical at 4 GHz ...073 .078 .090 .108 .138 S22 Ang. 31 21 22 17 13 0 -7 -13 -18 -24 -33 -49 Mag. .29 .38 .44 .47 .49 .5...
Description 2-8 GHz Medium Power Gallium Arsenide FET

File Size 60.35K  /  3 Page

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    BAT14 BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT14-073 BAT14-093 BAT14-103 BAT14-113 BAT14-123 Q62702D1346 Q62702D1345

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BAT14 BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT14-073 BAT14-093 BAT14-103 BAT14-113 BAT14-123 Q62702D1346 Q62702D1345 BAT14-124 BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 BAT14-094 BAT14-104 BAT14-114
OCR Text ... to + 150 - 65 to + 175 + 220 5.0 5.0 2.0 2.0 1.0 C C C Erg Quoted for a single discharge of torry line during the first 2.4 ns curren...073, -074, -093, -094 BAT14-103, -104, -113, -114 BAT14-123, -124 Forward voltage 2 IF2 = 1 mA BAT14...
Description From old datasheet system
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管(伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器)

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    HGTG12N60C3D

Harris, Corp.
Fairchild Semiconductor
HARRIS[Harris Corporation]
Part No. HGTG12N60C3D
OCR Text ... 12 15 96 20 30 24A at 600V 104 0.83 -40 to 150 260 4 13 UNITS V A A A A V V W W/oC oC oC s s Collector-Emitter Voltage . . . . . . . . ....073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,...
Description 36 MACROCELL 3.3 VOLT ISP CPLD 4A00V的,的ufs系列N沟道IGBT的与反平Hyperfast二极
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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    IRL5602S IRF530S IRL5602STRR IRL5602STRL

IRF[International Rectifier]
Part No. IRL5602S IRF530S IRL5602STRR IRL5602STRL
OCR Text ... VDSS = -20V G S RDS(on) = 0.042W ID = -24A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proc...073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (....
Description -20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

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    LT1493CS LT1492 LT1492CN8 LT1492CS8 LT1493 14923F

LINER[Linear Technology]
Part No. LT1493CS LT1492 LT1492CN8 LT1492CS8 LT1493 14923F
OCR Text ...w Supply Current per Amplifier: 0.55mA Max Input Offset Voltage: 180V Max Input Offset Voltage Drift: 3V/C Max Input Offset Current: 20nA Ma...073 0.400 480 0.008 0.095 0.575 700 V V V A 15V ELECTRICAL CHARACTERISTICS VS = 15V, VCM = 0V...
Description From old datasheet system
5MHz, 3V/s, Low Power Single Supply, Dual and Quad Precision Op Amps
5MHz, 3V/us, Low Power Single Supply, Dual and Quad Precision Op Amps

File Size 361.20K  /  16 Page

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    MH16S64BAMD-6 B99029

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH16S64BAMD-6 B99029
OCR Text ...in TSOP package Single 3.3V +/- 0.3V supply Max.Clock frequency 133MHz Fully synchronous operation referenced to clock rising edge 4-bank op...073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM PIN NO. 1 2 3 4 5 6 7 8 9 1...
Description From old datasheet system
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM

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    P6SMB22A P6SMB18A P6SMB30A P6SMB33A P6SMB36A P6SMB39A P6SMB150A P6SMB15A P6SMB75A P6SMB200A P6SMB20A P6SMB8.2A P6SMB82A

CENTRAL[Central Semiconductor Corp]
Part No. P6SMB22A P6SMB18A P6SMB30A P6SMB33A P6SMB36A P6SMB39A P6SMB150A P6SMB15A P6SMB75A P6SMB200A P6SMB20A P6SMB8.2A P6SMB82A P6SMB130A P6SMB13A P6SMB110A P6SMB9.1A P6SMB91A P6SMB51A P6SMB56A P6SMB170A P6SMB7.5A P6SMB12A P6SMB120A P6SMB10A P6SMB100A P6SMB43A P6SMB6.8A P6SMB62A P6SMB47A P6SMB68A P6SMB11A P6SMB160A P6SMB16A P6SMB180A P6SMB24A P6SMB27A
OCR Text ...0.5 11.4 12.4 14.3 15.2 17.1 19.0 NOM 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 MAX 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21....073 0.075 0.078 0.081 0.084 0.086 0.088 0.090 C6V8A C7V5A C8V2A C9V1A C10A C11A C12A C13A C15A C16A ...
Description UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS 6.8 THRU 200 VOLTS
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS

File Size 91.54K  /  2 Page

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