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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM366S823BT
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| OCR Text |
0 (february 1998) - input leakage currents (inputs / dq) of component level are changed. i il (inputs) : 5ua to 1ua, i il (dq) : 5ua to 1.5ua. - cin to be measured at v dd = 3.3v, t a = 23 c, f = 1mhz, v ref... |
| Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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| File Size |
153.21K /
13 Page |
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it Online |
Download Datasheet
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM366S823BTL
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| OCR Text |
...-pin glass-epoxy substrate. two 0.33uf decoupling capacitors are mounted on the printed circuit board in parallel for each sdram. the kmm366s823btl is a dual in-line memory module and is intended for mounting into 168-pin edge connector soc... |
| Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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| File Size |
143.39K /
13 Page |
View
it Online |
Download Datasheet
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM366S804BTL
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| OCR Text |
...-pin glass-epoxy substrate. two 0.33uf decoupling capacitors are mounted on the printed circuit board in parallel for each sdram. the kmm366s804btl is a dual in-line memory module and is intended for mounting into 168-pin edge connector soc... |
| Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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| File Size |
142.84K /
13 Page |
View
it Online |
Download Datasheet
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EEPROM
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| Part No. |
LE28DW3215AT-80
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| OCR Text |
...ct to change with out noticc. r.0.00 (2002/2/6) no. xxxx -1/17 features: ? single 3.0-volt read and write operations ? separate memory b...5ua(typical) ? auto low power mode current: 5ua(typical) ? fast write operation ? bank erase + p... |
| Description |
EEPROM
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| File Size |
126.95K /
17 Page |
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it Online |
Download Datasheet
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