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				EXCELSEMI[Excel Semiconductor Inc.]
Part No.	ES29LV160D-70WC ES29LV160E ES29LV800DT-90TGI ES29BDS160DT-90TGI ES29BDS400FB-90TGI ES29DL400FB-90TGI ES29DL160DT-90TGI ES29LV640EB-90TGI ES29LV800D-70WC ES29LV800ET-70WC ES29LV800ET-90TGI ES29LV800FB-90TGI ES29LV320DT-90TGI ES29LV320ET-90TGI ES29DS640EB-90TGI ES29BDS640EB-90TGI ES29LV640FT-70WC ES29BDS160D-70WC ES29BDS160ET-70WC ES29BDS160ET-90TGI ES29BDS160FB-90TGI ES29BDS320DT-90TGI ES29BDS320ET-90TGI ES29BDS320FB-90TGI ES29BDS320FT-70WC ES29BDS400ET-70WC ES29BDS400ET-90TGI ES29BDS640DT-90TGI ES29BDS640ET-90TGI ES29BDS640FT-70WC ES29BDS800D-70WC ES29BDS800DT-90TGI ES29BDS800ET-70WC ES29BDS800ET-90TGI ES29BDS800FB-90TGI ES29DL160D-70WC ES29DL160ET-70WC ES29DL160ET-90TGI ES29DL160FB-90TGI ES29DL320D-70WC ES29DL320DT-90TGI ES29DL320ET-90TGI ES29DL320FB-90TGI ES29DL320FT-70WC ES29DL400DB-70WC ES29DL400ET-90TGI ES29DL640DT-90TGI ES29DL640ET-90TGI ES29DL640FT-70WC ES29DL800D-70WC ES29DL800DT-90TGI ES29DL800ET-70WC ES29DL800ET-90TGI ES29DL800FB-90TGI ES29DS160D-70WC ES29DS160DT-90TGI ES29DS160ET-70WC ES29DS160ET-90TGI ES29DS160FB-90TGI ES29DS320DT-90TGI ES29DS320ET-90TGI ES29DS320FT-70WC ES29DS400ET-70WC ES29DS400ET-90TGI ES29DS400FB-90TGI ES29DS640DT-90TGI ES29DS640ET-90TGI ES29DS640FT
OCR Text	0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES * Single power supply operation - 2.7V -3.6V for read, program and erase operatio...8us/word ( typical ) - Sector erase time : 0.7sec/sector ( typical ) * Power consumption (typical va...
Description	16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
File Size	697.63K / 53 Page	View it Online	Download Datasheet

				EXCELSEMI[Excel Semiconductor Inc.]
Part No.	ES29LV160D-90RTG ES29LV160DB-80RTG ES29LV800DB-80RTG ES29LV400DB-80RTG ES29LV800D ES29DS800DB-80RTG ES29LV800E-90RTG ES29LV320D-90RTG ES29LV320E-90WC ES29LV320ET-90RTG ES29LV800FB-12RTG ES29BDS160D-90RTG ES29BDS160DB-80RTG ES29BDS160E-90WC ES29BDS160FB-12RTG ES29BDS320D-90RTG ES29BDS320E-90WC ES29BDS320ET-90RTG ES29BDS320FB-12RTG ES29BDS400DB-80RTG ES29BDS400E-90RTG ES29BDS400FB-12RTG ES29BDS400FT-90RTG ES29BDS640D-90RTG ES29BDS640E-90WC ES29BDS640ET-90RTG ES29BDS640FB-12RTG ES29BDS640FT-80RTG ES29BDS800DB-80RTG ES29BDS800E-90RTG ES29BDS800FB-12RTG ES29DL160D-90RTG ES29DL160DB-80RTG ES29DL160E-90RTG ES29DL160E-90WC ES29DL160FB-12RTG ES29DL320D-90RTG ES29DL320DB-80RTG ES29DL320E-90WC ES29DL320FB-12RTG ES29DL400D-70WCI ES29DL400DB-80RTG ES29DL400E-90RTG ES29DL400FT-90RTG ES29DL640D-90RTG ES29DL640E-90WC ES29DL640ET-90RTG ES29DL640FB-12RTG ES29DL640FT-80RTG ES29DL800DB-80RTG ES29DL800E-90RTG ES29DL800FB-12RTG ES29DL800FT-90RTG ES29DS160D-90RTG ES29DS160DB-80RTG ES29DS160E-90WC ES29DS160FB-12RTG ES29DS320D-90RTG ES29DS320E-90WC ES29DS320ET-90RTG ES29DS320FB-12RTG ES29DS320FT-80RTG ES29DS400DB-80RTG ES29DS400E-90RTG ES29DS400FB-12RTG ES29DS400FT-90RTG ES29DS640D-90RTG ES29DS640E-90WC ES
OCR Text	0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES * Single power supply operation - 2.7V -3.6V for read, program and erase operatio...8us/word ( typical ) - Sector erase time : 0.7sec/sector ( typical ) * Power consumption (typical va...
Description	8MBIT(1M X 8/512K X 16) CMOS 3.0 VOLT-ONLY, BOOT SECTOR FLASH MEMORY
File Size	677.25K / 50 Page	View it Online	Download Datasheet

				EXCELSEMI[Excel Semiconductor Inc.]
Part No.	ES29LV160DB-12TG ES29LV800DB-12TG ES29LV160D ES29DS800DB-12TG ES29BDS400FB-12TG ES29DL400FB-12TG ES29BDS160EB-12TG ES29LV800EB-12TG ES29LV800FB-12TG ES29LV320DB-12TG ES29LV320EB-12TG ES29LV320ET-80TG ES29LV320FB-12TG ES29LV160EB-12TG ES29LV800FT-80TG ES29BDS160DB-12TG ES29BDS160FB-12TG ES29BDS160FT-80TG ES29BDS320DB-12TG ES29BDS320EB-12TG ES29BDS320ET-80TG ES29BDS320FB-12TG ES29BDS320FT-80TG ES29BDS400EB-12TG ES29BDS400FT-80TG ES29BDS640DB-12TG ES29BDS640EB-12TG ES29BDS640ET-80TG ES29BDS640FB-12TG ES29BDS640FT-80TG ES29BDS800EB-12TG ES29BDS800FB-12TG ES29BDS800FT-80TG ES29DL160DB-12TG ES29DL160EB-12TG ES29DL160FB-12TG ES29DL160FT-80TG ES29DL320DB-12TG ES29DL320EB-12TG ES29DL320ET-80TG ES29DL320FB-12TG ES29DL320FT-80TG ES29DL400EB-12TG ES29DL400FT-80TG ES29DL640DB-12TG ES29DL640EB-12TG ES29DL640ET-80TG ES29DL640FB-12TG ES29DL640FT-80TG ES29DL800EB-12TG ES29DL800FB-12TG ES29DL800FT-80TG ES29DS160DB-12TG ES29DS160EB-12TG ES29DS160ET-80TG ES29DS160FB-12TG ES29DS160FT-80TG ES29DS320DB-12TG ES29DS320EB-12TG ES29DS320ET-80TG ES29DS320FB-12TG ES29DS320FT-80TG ES29DS400EB-12TG ES29DS400FB-12TG ES29DS400FT-80TG ES29DS640DB-12TG ES29DS640EB-12TG ES29DS640ET-80TG ES29DS800EB-12TG ES29DS800FB-1
OCR Text	0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES * Single power supply operation - 2.7V -3.6V for read, program and erase operatio...8us/word ( typical ) - Sector erase time : 0.7sec/sector ( typical ) * Power consumption (typical va...
Description	16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
File Size	705.05K / 54 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	M368L6523CUS-CCC M381L6523CUM-CLCC M368L2923CUN-CLCC M368L3324CUS-CLCC M368L6523CUS M381L2923CUM-CCC
OCR Text	... (RoHS compliant) Revision 1.0 February. 2005 Rev. 1.0 February. 2005 256MB, 512MB, 1GB Unbuffered DIMM 512Mb C-die Revision Histo...8us refresh interval(8K/64ms refresh) * Serial presence detect with EEPROM * PCB : Height 1,250 (mil...
Description	DDR SDRAM Unbuffered Module
File Size	440.61K / 25 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4H561638F-TCCC K4H561638F-TCC4 K4H560838F-TC K4H560838F-TCC4 K4H560838F-TCCC
OCR Text	...die Revision History Revison 1.0 (June. 2003) 1. First release Revison 1.1 (August. 2003) 1. Added x8 org (K4H560838F) DDR SDRAM Rev....8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II package D...
Description	256Mb F-die DDR400 SDRAM Specification 256Mb的的F -模具支持DDR400内存规格
File Size	168.74K / 19 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4H561638F-UC K4H561638F-UC_LB3 K4H560838F-UC_LA2 K4H560838F-UC_LAA K4H560838F-UC_LB0 K4H560838F-UC_LB3 K4H561638F-UC_LA2 K4H561638F-UC_LAA K4H561638F-UC_LB0 K4H560838F-UC/LA2 K4H560838F-UC/LAA K4H560838F-UC/LB0 K4H560838F-UC/LB3 K4H561638F-UC/LA2 K4H561638F-UC/LAA K4H561638F-UC/LB0 K4H561638F-UC/LB3
OCR Text	...ie Revision History Revision 1.0 (April, 2004) -First release Revision 1.1 (May, 2004) -Modified IDD current spec. Revision 1.2 (October, 2...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II Pb-Free pack...
Description	256Mb F-die DDR SDRAM Specification
File Size	203.61K / 23 Page	View it Online	Download Datasheet

				SAMSUNG
Part No.	K4H561638F
OCR Text	...ie Revision History Revision 1.0 (June, 2003) - First version for internal review Revision 1.1 (Agust, 2003) - Added x8 org (K4H560838F) an...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II package D...
Description	DDR SDRAM 256Mb F-die
File Size	203.41K / 23 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4H561638F K4H561638F-TC_LB3 FMB857B K4H560838F-TC_LA2 K4H560838F-TC_LAA K4H560838F-TC_LB0 K4H560838F-TC_LB3 K4H561638F-TC_LA2 K4H561638F-TC_LAA K4H561638F-TC_LB0 K4H560838F-TC/LA2 K4H560838F-TC/LAA K4H560838F-TC/LB0 K4H560838F-TC/LB3 K4H561638F-TC/LA2 K4H561638F-TC/LAA K4H561638F-TC/LB0 K4H561638F-TC/LB3
OCR Text	...ie Revision History Revision 1.0 (June, 2003) - First version for internal review Revision 1.1 (Agust, 2003) - Added x8 org (K4H560838F) an...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II package D...
Description	256Mb F-die DDR SDRAM Specification
File Size	326.57K / 23 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4H560838E K4H560838E-TC_LB3 K4H560438E-TC_LA2 K4H560438E-TC_LAA K4H560438E-TC_LB0 K4H560438E-TC_LB3 K4H560838E-TC_LA2 K4H560838E-TC_LAA K4H560838E-TC_LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB0 K4H560838E-TC/LB3
OCR Text	...ie Revision History Revision 1.0 (April, 2003) - First release. Revision 1.1 (August, 2003) - Corrected typo. Revision1.2 (October, 2004) -...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II package D...
Description	DDR SDRAM 256Mb E-die (x4, x8)
File Size	211.78K / 24 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	M378T2953BG0-CC M378T2953BG0-CD5_CC M378T3354BG M391T6553BG0-CD5_CC M378T3354BG0-CC M378T3354BG0-CD5_CC M378T6553BG0-CC M378T6553BG0-CD5_CC M391T2953BG0-CC M391T2953BG0-CD5_CC M391T6553BG0-CC M378T2953BG0-CD5/CC M378T3354BG0-CD5/CC M391T2953BG0-CD5/CC M378T6553BG0-CD5/CC M391T6553BG0-CD5/CC
OCR Text	...ht x64 Non ECC M378T3354BG(Z)0-CD5/CC M378T6553BG(Z)0-CD5/CC M378T2953BG(Z)0-CD5/CC M391T6553BG(Z)0-CD5/CC M391T2953BG(Z)0-CD5/CC 256MB 5...8us at lower then TCASE 85xC, 3.9us at 85xC < TCASE < 95 xC * Serial presence detect with EEPROM * D...
Description	DDR2 Unbuffered SDRAM MODULE
File Size	364.50K / 23 Page	View it Online	Download Datasheet

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