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  10-300s Datasheet PDF File

For 10-300s Found Datasheets File :: 12303    Search Time::2.563ms    
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    APM2055NU APM2055NUC-TRL APM2055NUC-TU APM2055NUC-TUL APM2055NUC-TR

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ANPEC[Anpec Electronics Coropration]
Part No. APM2055NU APM2055NUC-TRL APM2055NUC-TU APM2055NUC-TUL APM2055NUC-TR
OCR Text ...C=100C TC=25C TC=100C 3.5 30 15 10* 6 50 20 2.5 W C/W V C C A Unit Common Ratings (TA=25C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Dr...300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistanc...
Description N-Channel Enhancement Mode MOSFET

File Size 182.02K  /  10 Page

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    APM2512NUC-TU APM2512NU APM2512NUC-TR APM2512NUC-TUL APM2512NUC-TRL

ANPEC[Anpec Electronics Coropration]
Part No. APM2512NUC-TU APM2512NU APM2512NUC-TR APM2512NUC-TUL APM2512NUC-TRL
OCR Text ...C TA=100C TA=25C TA=100C 100 65 10 6 2.5 1 50 100 65 7 4 1.6 0.6 75 W C/W W C/W A A Mounted on PCB of Minimum Footprint IDP ID PD RJA 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-J...
Description N-Channel Enhancement Mode MOSFET

File Size 202.25K  /  11 Page

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    T1G2028536-FSEVB1 T1G2028536-FS-15

TriQuint Semiconductor
Part No. T1G2028536-FSEVB1 T1G2028536-FS-15
OCR Text 10-17-13 - 1 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com applications ? mi...300s, 10% rf characterization ? load pull performance at 1.0 ghz (1) test conditions unless o...
Description 285W, 36V DC ?2 GHz, GaN RF Power Transistor

File Size 978.80K  /  13 Page

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    T1G2028536-FLEVB1 T1G2028536-FL-15

TriQuint Semiconductor
Part No. T1G2028536-FLEVB1 T1G2028536-FL-15
OCR Text 10-17-13 - 1 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com applications ? mi...300s, 10% rf characterization ? load pull performance at 1.0 ghz (1) test conditions unless o...
Description 285W, 36V DC ?2 GHz, GaN RF Power Transistor

File Size 981.61K  /  13 Page

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    IRGS15B60KD IRGSL15B60KD IRGB15B60KD

IRF[International Rectifier]
Part No. IRGS15B60KD IRGSL15B60KD IRGB15B60KD
OCR Text ...ange Soldering Temperature, for 10 sec. D2Pak IRGS15B60KD Max. 600 31 15 62 62 31 15 64 20 208 83 -55 to +150 TO-262 IRGSL15B60KD Un...300s Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 300s 100 90 80 70 ICE (A) 60...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 322.37K  /  16 Page

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    BAS70JW

DIODES[Diodes Incorporated]
Part No. BAS70JW
OCR Text ...UCT SOT-363 Dim BC Min 0.10 1.15 2.00 0.30 1.80 1.80 3/4 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 2.20 0.10 1.00 0.40 0.25 M...300s, IF = 1.0mA tp <300s, IF = 15mA tp < 300s, VR = 50V VR = 0V, f = 1.0MHz IF = IR = 10mA to IR = ...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

File Size 52.48K  /  1 Page

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    ZXMC3A16DN8TC ZXMC3A16DN8TA ZXMC3A16DN8_05 ZXMC3A16DN8 ZXMC3A16DN805

Diodes Incorporated
ZETEX[Zetex Semiconductors]
Part No. ZXMC3A16DN8TC ZXMC3A16DN8TA ZXMC3A16DN8_05 ZXMC3A16DN8 ZXMC3A16DN805
OCR Text ...0 20 6.4 5.1 4.9 30 3.4 30 1.25 10 1.8 14 2.1 17 -55 to +150 -30 20 -5.4 -4.3 -4.1 -25 -3.2 -25 UNIT V V A A A A A A W mW/C W mW/C W mW/C...300s - pulse width limited by maximum junction temperature. (d) For a dual device with one active di...
Description 4900 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
   COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

File Size 305.34K  /  10 Page

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    APM2505NU APM2505NUC-TR APM2505NUC-TRL APM2505NUC-TU APM2505NUC-TUL

Anpec Electronics Coropration
Part No. APM2505NU APM2505NUC-TR APM2505NUC-TRL APM2505NUC-TU APM2505NUC-TUL
OCR Text ...A=100C TA=25C TA=100C 120 75 17 10 2.5 1 50 120 75 14 9 1.6 0.6 75 W C/W W C/W A A Mounted on PCB of Minimum Footprint IDP ID PD RJA Note: * Current limited by bond wire. 300s Pulse Drain Current Tested Continuous Drain Current Maxim...
Description N-Channel Enhancement Mode MOSFET

File Size 181.12K  /  10 Page

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    IRLBD59N04E 2297

International Rectifier
Part No. IRLBD59N04E 2297
OCR Text ...ange Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew 5 Lead-D2Pak Max. 59 41 230 130 0.89 10 340 35 13 3.6 50 ...300s PULSE WIDTH T J = 25C 10 100 1 0.1 1 300s PULSE WIDTH T J = 175C 10 100 VDS, Drain-t...
Description HEXFET? Power MOSFET
From old datasheet system

File Size 116.08K  /  8 Page

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