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TRIQUINT[TriQuint Semiconductor]
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Part No. |
TQS5201
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OCR Text |
...t.com Datasheet rev 1.1; August 14, 2003.
1
TQS5201 Preliminary Datasheet
Absolute Maximum Ratings
Parameter Symbol Value min Contro...5GHz 0.0 Insertion Loss (dB) -0.4 -0.8 -1.2 -1.6 -2.0 20 22 24 26 28 30 32 34
Vc= 2.5V Vc= 3.0V Vc=... |
Description |
TX-RX and Diversity Switch for Dualmode, 802.11b & g Systems
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File Size |
332.99K /
9 Page |
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Excelics Semiconductor
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Part No. |
EIA1414-8P
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OCR Text |
... factory. effective 03/2003 14.0 - 14.5ghz, 8w internally matched power fet 14.0 - 14.5ghz bandwidth and input/output impedance matched to 50 ohm high pae(25% typical) +39 dbm typical p 1db out... |
Description |
14.0-14.5ghz 8W Internally Matched Power FET
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File Size |
43.55K /
1 Page |
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
TIM1414-2L
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OCR Text |
14.0GHz to 14.5ghz HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5ghz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain ... |
Description |
MICROWAVE POWER GaAs FET
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File Size |
114.24K /
4 Page |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
TIM1414-10LA
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OCR Text |
...0dBm HIGH POWER P1dB=40.5dBm at 14.0GHz to 14.5ghz HIGH GAIN G1dB=6.0 dB at 14.0 GHz to 14.5ghz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain Compres... |
Description |
MICROWAVE POWER GaAs FET
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File Size |
133.62K /
4 Page |
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it Online |
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