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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4654 IGA03N120H2 Q67040-S4648
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| OCR Text |
...3A 3A Eoff 0.15mJ 0.15mJ Tj,max 150c 150c Marking G03H1202 G03H1202 Package P-TO-220-3-31 P-TO-220-3-34 Ordering Code Q67040-S4648 Q67040-S4654
Maximum Ratings Parameter Collector-emitter voltage Triangular collector peak current (VGS = ... |
| Description |
IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT FullPak
HighSpeed 2-Technology
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| File Size |
198.98K /
10 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4655 IKA03N120H2 Q67040-S4649
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| OCR Text |
... operating area VCE 1200V, Tj 150c Diode forward current TC = 25C TC = 100C Gate-emitter voltage Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -4... |
| Description |
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT FullPak
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
High Speed CMOS Logic Hex Non-Inverting Buffers 16-TSSOP -55 to 125
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| File Size |
332.84K /
14 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67060-S6136 BTS5440G
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| OCR Text |
...t circuit protection;Tj = -40...150c Maximum voltage across DMOS Load dump protection 3) VLoadDump4) = VA + VS; VA = 13,5 V In = low or high; td = 400 ms; RI4) = 2 RL = 2.25 RL = 6.8 Load current (Short - circuit current, see page 7) Ope... |
| Description |
Addendum for PCN-Datasheet 2004-018-A
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| File Size |
457.91K /
18 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67060-S7216-A001 BTS3118N
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| OCR Text |
... circuit protection T j = -40...150c Continuous input current VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation T C = 85 C Unclamped single pulse inductive energy 1) Load dump protection VLoadDump2) = V A ... |
| Description |
Protected Low Side Switch
SMART LOWSIDE POWER SWITCH 智能LOWSIDE电源开
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| File Size |
246.49K /
10 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
QM30E2Y QM30
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| OCR Text |
...C)
Test conditions VR=VRRM, Tj=150c IF=30A IF=30A, di/dt=-60A/s, VR=600V, Tj=150c Junction to case Conductive grease applied (case to fin) Limits Min. -- -- -- -- -- -- Typ. -- -- -- -- -- -- Max. 5.0 1.5 0.9 15 1.3 0.15 Unit mA V s C C/ W... |
| Description |
MEDIUM POWER SWITCHING USE INSULATED TYPE
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| File Size |
73.30K /
6 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
QM75E3Y-2H QM75E2Y-2H QM75E2Y
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| OCR Text |
...C)
Test conditions VR=VRRM, Tj=150c IF=75A IF=75A, di/dt=-150A/s, VR=600V, Tj=150c Junction to case Conductive grease applied (case to fin) Limits Min. -- -- -- -- -- -- Typ. -- -- -- -- -- -- Max. 15 1.5 1.0 40 0.6 0.13 Unit mA V s C C/ W... |
| Description |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
102.45K /
6 Page |
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Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
QM75E3Y-H QM75E2Y-H
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| OCR Text |
...C)
Test conditions VR=VRRM, Tj=150c IF=75A IF=75A, di/dt=-150A/s, VR=300V, Tj=150c Junction to case Conductive grease applied (case to fin) Limits Min. -- -- -- -- -- -- Typ. -- -- -- -- -- -- Max. 1.0 1.5 0.9 30 0.6 0.15 Unit mA V s C C/ ... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
88.87K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
RC2951 RC2951X33
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| OCR Text |
...Internally Limited 260C -65 to +150c -55 to +150c -0.3 to +30V -1.5 to +30V -0.3 to +30V -0.3 to +30V
Notes: 1. Junction to ambient thermal resistance for the S.O. (M) package is 160C/W. 2 May exceed input supply voltage. 3. When used in... |
| Description |
Adjustable Micropower Voltage Regulator
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| File Size |
102.11K /
11 Page |
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it Online |
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