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Intersil
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| Part No. |
FSYA9250R FSYA9250D FN4583
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V... |
| Description |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
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| File Size |
55.57K /
8 Page |
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it Online |
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Intersil
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| Part No. |
FSPJ260F FSPJ260R FN4879
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| OCR Text |
...ven National Labs. 5. Fluence = 1e5 ions/cm2 (Typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36 LET ... |
| Description |
N-Channel Power MOSFETs N-Channel Power MOSFETs
From old datasheet system
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| File Size |
82.94K /
8 Page |
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it Online |
Download Datasheet |
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Intersil
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| Part No. |
FSPJ264F FSPJ264R FN4894
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| OCR Text |
...ven National Labs. 5. Fluence = 1e5 ions/cm2 (Typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36 LET ... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
From old datasheet system
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| File Size |
81.13K /
8 Page |
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it Online |
Download Datasheet |
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HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7402 FN4374
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 26 37 37 37 TYPICAL RANGE () 43 43 36 36 36 APPLIED VGS BIAS (... |
| Description |
3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
3A, 500V, 2.70 Ohm, Rad Hard, Channel Power MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET
3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
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| File Size |
44.98K /
8 Page |
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it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7405 FN4375
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) -20... |
| Description |
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 20 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET
25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
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| File Size |
44.24K /
8 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
|
| Part No. |
JANSR2N7438 FN4638
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 ... |
| Description |
From old datasheet system
Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
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| File Size |
56.13K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSR1110R FSR1110D FN4828 FSR1110R4 FSR1110D1 FSR1110R3
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 28 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) -20 ... |
| Description |
From old datasheet system
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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| File Size |
86.53K /
9 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
|
| Part No. |
JANSR2N7411 FN4493
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
-120
Unless Otherwise Specified
LET = 26MeV/mg/cm2, ... |
| Description |
2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET
2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET
From old datasheet system
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| File Size |
44.68K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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