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1ns Datasheet PDF File

For 1ns Found Datasheets File :: 2386 Search Time::1.156ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL1H K4S281632B-TL1L K4S281632B-TL75 K4S281632B-TL80
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	107.58K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TL750
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	111.68K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
Part No.	K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TP75
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL CONNECTOR ACCESSORY 连接器附
File Size	46.28K / 9 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632D-L55 K4S281632D-L60 K4S281632D-L75 K4S281632D-L7C K4S281632D-NC1H K4S281632D-NC60 K4S281632D-NC75 K4S281632D-NC7C K4S281632D-NL1H K4S281632D-NL60 K4S281632D-NL75 K4S281632D-NL7C K4S281632D-TC K4S281632D-TC_L60 K4S281632D-TC75 K4S281632D-TL75 K4S281632D-TC_L1H K4S281632D-TC_L1L K4S281632D-TC_L55 K4S281632D-TC_L75 K4S281632D-TC_L7C K4S281632D-TC/L1H K4S281632D-TC/L1L K4S281632D-TC/L55 K4S281632D-TC/L60 K4S281632D-TC/L75 K4S281632D-TC/L7C K4S281632D-TL60 K4S281632D-TC7C K4S281632D-TL55 K4S281632D-TL7C
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
File Size	110.59K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S560832A-TC_L75 K4S560832A-TC_L80 K4S560832A-TC/L80 K4S560832A-TC/L1H K4S560832A-TC/L1L K4S560832A-TC/L75
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
File Size	125.57K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S560832B K4S560832B-TC_L1H K4S560832B-TC_L1L K4S560832B-TC_L75 K4S560832B-TC/L75 K4S560832B-TC/L1L K4S560832B-TC/L1H
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	130.10K / 11 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S560832C-TC_L75 K4S560832C-TC_L7C K4S560832C-TC/L1H K4S560832C-TC/L1L K4S560832C-TC/L75 K4S560832C-TC/L7C K4S560832C-TC750
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	111.63K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S560832D-TC_L75 K4S560832D-TC_L7C K4S560832D-TC/L1H K4S560832D-TC/L1L K4S560832D-TC/L75 K4S560832D-TC/L7C
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	116.54K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L70 K4S640832C-TC/L80
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	128.76K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K4S640832D-TC/L1H K4S640832D-TC/L1L K4S640832D-TC/L75 K4S640832D-TC/L80
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	127.15K / 10 Page	View it Online	Download Datasheet

For 1ns Found Datasheets File :: 2386 Search Time::1.156ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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