| |
|
 |
STMicroelectronics N.V.
|
| Part No. |
TDA2050V
|
| OCR Text |
...al shutdown description the tda 2050 is a monolithic integrated circuit in pentawatt package, intended for use as an audio class ab audio amplifier. thanks to its high power capability the tda2050 is able to provide up to 35w true rms power... |
| Description |
32W Hi-Fi AUDIO POWER AMPLIFIER 32W高保真音频功率放大器
|
| File Size |
175.73K /
13 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
TriQuint Semiconductor, Inc.
|
| Part No. |
CV211-2APCB75
|
| OCR Text |
...lo 6 7 8 9 10 11 1900 1950 2000 2050 2100 2150 2200 rf frequency (mhz) conversion gain (db) lo = -2.5 dbm lo = 0 dbm lo = 2.5 dbm input ip3 vs rf frequency 25 c, if = 75 mhz, low-side lo 22 24 26 28 30 32 1900 1950 2000 2050 2100 2150 2200 ... |
| Description |
UMTS-band Dual-Branch Downconverter UMTS的频段双科变频器
|
| File Size |
394.92K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
MicroWave Technology, Inc.
|
| Part No. |
MPS-0820A9D-02
|
| OCR Text |
2050 mhz linear amplifier preliminary data sheet m p s - 0 8 2 0 a 9 d - 0 2 features: -67 dbc acpr custom frequencies av ailable +43 dbm ip3 +24 dbm p1db 13.5 db gain 1.4:1 vswr single positiv e bias ... |
| Description |
800 MHz - 2050 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER LEADLESS PACKAGE-10
|
| File Size |
249.57K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Prewell
|
| Part No. |
PH435
|
| OCR Text |
...85 o c 1800 1850 1900 1950 2000 2050 2100 30 35 40 45 oip3(dbm) fre q uenc y( mhz ) +25 o c -40 o c +85 o c -40 -20 0 20 40 60 80 36 38 40 42 oip3(dbm) tem p erature ( o c ) qy() qy() 2 3 4 5 6 noise figure vs. frequency nf(db) p(... |
| Description |
High Linearity InGaP HBT Amplifier
|
| File Size |
655.22K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
NXP Semiconductors N.V.
|
| Part No. |
BLF7G21L-160P BLF7G21LS-160P
|
| OCR Text |
...t frequencies from 1800 mhz to 2050 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. [2] test signal: 3gpp; test model 1; 64 dpch; par = 7.2 db at 0.01 % probability o... |
| Description |
160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz
Power LDMOS transistor BLF7G21L-160P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;BLF7G21L-160P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;
Power LDMOS transistor BLF7G21LS-160P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;BLF7G21LS-160P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
| File Size |
134.37K /
15 Page |
View
it Online |
Download Datasheet |
| |
|
|
飞思卡尔半导体(中国)有限公司
|
| Part No. |
100B0R3BW 100B8R2CW
|
| OCR Text |
...ical characteristics 2200 26 32 2050 ?60 0 irl g ps acpr f, frequency (mhz) figure 5. single - carrier w - cdma wideband performance @ p out = 26 dbm g ps , power gain (db) acpr, adjacent channel power ratio (dbc) input return loss (db) i... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
|
| File Size |
702.41K /
16 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
