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  20a 600v Datasheet PDF File

For 20a 600v Found Datasheets File :: 1392    Search Time::1.515ms    
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    SKW30N60HS SKW30N60HS08

Infineon Technologies AG
Part No. SKW30N60HS SKW30N60HS08
OCR Text ...10hz 100hz 1khz 10khz 100khz 0a 20a 40a 60a 80a 100a t c =80c t c =110c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a 100a t p =4...600v , start at t j = 25c ) figure 20. typical short circuit collector current as a functio...
Description High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

File Size 347.82K  /  14 Page

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    Infineon
Part No. IHW20T120
OCR Text ... ordering code ihw20t120 1200v 20a 1.7v 150 c h20t120 to-247ac q67040-s4652 maximum ratings parameter symbol value unit collector-emi...600v, t j = 25 c - 120 - a switching characteristic, inductive load, at t j =25 c ...
Description IGBT in Trench and Fieldstop Tech

File Size 347.61K  /  14 Page

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    FGH40N60SMDF

Fairchild Semiconductor
Part No. FGH40N60SMDF
OCR Text ...fm diode forward voltage i f = 20a t c = 25 o c - 1.3 1.7 v t c = 175 o c - 1.15 - e rec reverse recovery energy i f =20a, di f /dt = 20...600v, 40a field stop igbt typical performance characteristics figure 1. typical output characterist...
Description Field Stop IGBT

File Size 345.32K  /  10 Page

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    Mitsubishi Electric Corporation
Part No. RM20C1A-XXF RM20DA/CA/C1A-XXF RM20CA-XXF RM20DA-XXF
OCR Text .................................. 20a ? v rrm repetitive peak reverse voltage ...................... 600/800/1000/1200v ? t rr reverse recover...600v* 1 , t j =150 c junction to case case to fin, conductive grease applied min. typ. ...
Description FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)

File Size 53.32K  /  3 Page

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    SGB10N60A07

Infineon Technologies AG
Part No. SGB10N60A07
OCR Text ... 100hz 1khz 10khz 100khz 0a 10a 20a 30a 40a 50a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0,1a 1a 10a 15 s dc 1ms 2...600v, start at t j = 25 c) figure 20. typical short circuit collector current as a function of...
Description Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

File Size 788.53K  /  11 Page

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    SKB10N60A07

Infineon Technologies AG
Part No. SKB10N60A07
OCR Text ... 100hz 1khz 10khz 100khz 0a 10a 20a 30a 40a 50a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0,1a 1a 10a 15 s dc 1ms 200...600v, start at t j = 25 c) figure 20. typical short circuit collector current as a function of...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 1,142.03K  /  13 Page

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    Micross Components
Part No. ICE20N170
OCR Text ...s 50 v/ns v ds = 480v, i d = 20a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 180 w t c = 25...600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kin...
Description N-Channel Enhancement Mode MOSFET

File Size 753.80K  /  4 Page

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    FGH40N60SMDF

Fairchild Semiconductor
Part No. FGH40N60SMDF
OCR Text ...fm diode forward voltage i f = 20a t c = 25 o c - 1.3 1.7 v t c = 175 o c - 1.15 - e rec reverse recovery energy i f =20a, di f /dt = 20...600v, 40a field stop igbt typical performance characteristics figure 1. typical output characterist...
Description 600v, 40A Field Stop IGBT

File Size 280.56K  /  10 Page

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    Micross Components
Part No. ICE20N170U
OCR Text ...s 50 v/ns v ds = 480v, i d = 20a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 208 w t c = 25...600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kin...
Description N-Channel Enhancement Mode MOSFET

File Size 755.00K  /  4 Page

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    APT40GP90JDF2

Advanced Power Technology
Advanced Power Electronics, Corp.
Part No. APT40GP90JDF2
OCR Text ...0 0.95 0.90 i c = 80a i c = 20a i c = 40a 0123 456 0123456 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 6 8 10 12 14 16 -55 -25 0 25 50 ...600v r g = 5 ? l = 100 h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise...
Description MOSFET
68 A, 900 V, N-CHANNEL IGBT ISOTOP-4

File Size 207.37K  /  9 Page

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For 20a 600v Found Datasheets File :: 1392    Search Time::1.515ms    
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