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  25 25w Datasheet PDF File

For 25 25w Found Datasheets File :: 3474    Search Time::1.672ms    
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    APT5017BLC APT5017SLC APT10086BLC APT10086SLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5017BLC APT5017SLC APT10086BLC APT10086SLC
OCR Text ...UNIT Volts Amps 500 26 0.170 25 250 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS =...25W, Peak I = 30A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description POWER MOS VI 500V 30A 0.170 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.77K  /  2 Page

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    APT5018BLL APT5018SLL

ADPOW[Advanced Power Technology]
Part No. APT5018BLL APT5018SLL
OCR Text ... UNIT Volts Amps 500 27 0.18 25 250 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS =...25W, Peak I = 27A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.49K  /  2 Page

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    APT5020BLC APT5020SLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5020BLC APT5020SLC
OCR Text ... UNIT Volts Amps 500 26 0.20 25 250 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS =...25W, Peak I = 26A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description POWER MOS VI 500V 26A 0.200 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.78K  /  2 Page

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    APT50GF60BR

ADPOW[Advanced Power Technology]
Part No. APT50GF60BR
OCR Text ...OLTAGE (NORMALIZED) 1.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature 1.2 SWITCHING ENERGY LOSSES (mJ) 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 9, Maxi...
Description Fast IGBT 600V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 80.83K  /  5 Page

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    APT50GF60HR

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50GF60HR
OCR Text ...YP MAX UNIT 2600 280 165 170 25 100 20 100 100 110 30 90 ns nC pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay ...25W, L = 60H, Tj = 25C See MIL-STD-750 Method 3471 The maximum current is limited by lead temperatur...
Description Fast IGBT 600V 55A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 25.29K  /  2 Page

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    APT50M38JFLL

ADPOW[Advanced Power Technology]
Part No. APT50M38JFLL
OCR Text ...(.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) 050-7030 Rev - 3-2001 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 53.39K  /  2 Page

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    APT50M38JLL

Advanced Power Technology
Part No. APT50M38JLL
OCR Text ...(.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) 050-7020 Rev - 1-2001 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.38K  /  2 Page

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    APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL

ADPOW[Advanced Power Technology]
Part No. APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text ...(.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) 050-7117 Rev - 9-2001 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT50M50JLC APT5010JLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50M50JLC APT5010JLC
OCR Text ...(.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) 050-5932 Rev - 12-99 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 ...
Description POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT50M50L2FLL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2FLL
OCR Text ... (.228) 6.20 (.244) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 050-7115 Rev- 9-2001 Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.74K  /  2 Page

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