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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
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| Part No. |
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
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| OCR Text |
... 200 MHz fCK for 400Mb/sec/pin, 267mhz fCK for 533Mb/sec/pin * 4 Banks * Posted CAS * Programmable CAS Latency: 3, 4, 5 * Programmable Additive Latency: 0, 1 , 2 , 3 and 4 * Write Latency(WL) = Read Latency(RL) -1 * Burst Length: 4 , 8(Inte... |
| Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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| File Size |
325.20K /
19 Page |
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Download Datasheet
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Samsung semiconductor
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| Part No. |
K4T51043QE
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| OCR Text |
... 200 MHz fCK for 400Mb/sec/pin, 267mhz fCK for 533Mb/sec/ pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/ sec/pin * 4 Banks * Posted CAS * Programmable CAS Latency: 3, 4, 5, 6 * Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5 * ... |
| Description |
512Mb E-die DDR2 SDRAM Specification
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| File Size |
937.89K /
45 Page |
View
it Online |
Download Datasheet |
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Samsung semiconductor
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| Part No. |
K4T51163QG K4T51083QG K4T51163QG-HCLD5 K4T51163QG-HCLCC K4T51163QG-HCLE6 K4T51163QG-HCLE7 K4T51163QG-HCLF7 K4T51043QG-HCLD5 K4T51043QG-HCLE6 K4T51043QG-HCLE7 K4T51043QG-HCLF7 K4T51083QG-HCLCC K4T51083QG-HCLD5 K4T51083QG-HCLE6 K4T51083QG-HCLE7 K4T51083QG-HCLF7
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| OCR Text |
... 200 MHz fCK for 400Mb/sec/pin, 267mhz fCK for 533Mb/sec/ pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/ sec/pin * 4 Banks * Posted CAS * Programmable CAS Latency: 3, 4, 5, 6 * Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5 * ... |
| Description |
512Mb G-die DDR2 SDRAM Specification
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| File Size |
1,012.35K /
47 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
M393T5750BY0-CD5/CC M393T2950BZ0-CD5/CC M393T2953BZ0-CD5/CC M393T6553BZ0-CD5/CC M393T5750BS0-CD5/CC M393T6553BG0-CD5/CC M393T2953BG0-CD5/CC M393T2950BG0-CD5/CC M393T5750BY3-CD5/CC M393T2950BG3-CD5/CC M393T2953BG3-CD5/CC M393T6553BG3-CD5/CC M393T2950BZ3-CD5/CC M393T2953BZ3-CD5/CC M393T6553BZ3-CD5/CC M393T5750BS3-CD5/CC
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| OCR Text |
... 200 MHz fCK for 400Mb/sec/pin, 267mhz fCK for 533Mb/sec/pin * 4 Banks * Posted CAS * Programmable CAS Latency: 3, 4, 5 * Programmable Additive Latency: 0, 1 , 2 , 3 and 4 * Write Latency(WL) = Read Latency(RL) -1 * Burst Length: 4 , 8(Inte... |
| Description |
100 x 64 pixel format, TAB display
SWITCH, DPDT, CTR OFF LOCKING; Thread size:1/4 x 40UNS; Switch function type:DPDT Centre Off; Current, contact @ contact voltage AC max:3A; Current, contact @ contact voltage DC max:8A; Material, contact:Silver; Resistance, RoHS Compliant: Yes
SWITCH, SPDT, CTR OFF; Thread size:1/4 x 40UNS; Switch function type:SPDT On-Off-Mom; Current, contact @ contact voltage AC max:3A; Current, contact @ contact voltage DC max:8A; Material, contact:Silver; Resistance, contact:10mR; RoHS Compliant: Yes
TVS BIDIRECT 1500W 16V SMC
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC
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| File Size |
468.59K /
21 Page |
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it Online |
Download Datasheet |
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Samsung semiconductor
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| Part No. |
K4T1G164QD K4T1G084QD
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| OCR Text |
... 200 MHz fCK for 400Mb/sec/pin, 267mhz fCK for 533Mb/sec/ pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/ sec/pin * 8 Banks * Posted CAS * Programmable CAS Latency: 3, 4, 5, 6 * Programmable Additive Latency: 0, 1, 2, 3, 4, 5 * Wri... |
| Description |
(K4T1G084QD / K4T1G164QD) 1Gb A-die DDR2 SDRAM Specification
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| File Size |
633.26K /
27 Page |
View
it Online |
Download Datasheet |
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