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Infineon Technologies A...
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| Part No. |
SPP80N03S2L-06
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| OCR Text |
...ate voltage drain current v ds =30v, v gs =0v, t j =25c v ds =30v, v gs =0v, t j =125c i dss - - 0.01 10 1 100 a gate-source leak...80a v gs =4.5v, i d =80a, smd version r ds(on) - - 7 6.6 9.5 9.2 m w drain-source on-state ... |
| Description |
OptiMOS Power-Transistor
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| File Size |
417.04K /
8 Page |
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Infineon
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| Part No. |
SPB80N06S2L-06
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| OCR Text |
...urn-on delay time t d(on) v dd =30v, v gs =4.5v, i d =80a, r g =1.6 - 11 17 ns rise time t r - 21 32 turn-off delay time t d(off) - 60 90 fall time t f - 20 30 gate charge characteristics gate to source charge q gs v dd =44v, i d =80... |
| Description |
N-Channel OptiMOS Power Transistor
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| File Size |
516.02K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03
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| OCR Text |
...ate voltage drain current
V DS=30v, VGS=0V, Tj=25C V DS=30v, VGS=0V, Tj=125C
A 0.01 1 1 1 100 100 nA m 2.6 2.3 3.4 3.1
Gate-source le...80a V GS=10V, I D=80a, SMD version
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, D2PAK, RDSon = 3.1 mOhm, 80a, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, TO-220, RDSon = 3.4 mOhm, 80a, NL
OptiMOS Power-Transistor 的OptiMOS功率晶体
80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
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| File Size |
418.01K /
8 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
SPI100N03S2L-03
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| OCR Text |
...ate voltage drain current v ds =30v, v gs =0v, t j =25c v ds =30v, v gs =0v, t j =125c i dss - - 0.01 1 1 100 a gate-source leaka...80a v gs =4.5v, i d =80a, smd version r ds(on) - - 2.8 2.5 3.7 3.4 m w drain-source on-stat... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, TO-262, RDSon = 3mOhm, 100A, LL
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| File Size |
526.93K /
8 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
IPP05N03L IPB05N03L
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| OCR Text |
...ate voltage drain current
V DS=30v, V GS=0V, Tj=25C V DS=30v, V GS=0V, Tj=125C
A 0.01 10 1 1 100 100 nA m 5.6 5.2 4 3.7 7.5 7.2 5.2 4.9
...80a VR =15V, IF=lS, diF /dt=100A/s
Symbol
Conditions min.
Values typ. 110 2500 975 215 1.75... |
| Description |
80 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
OptiMOS Buck converter series
?OptiMOSPowerMOSFET.30v.TO-220.RDSon=5.2mOhm.80a.LL?
OptiMOS Power MOSFET, 30v, TO-220, RDSon = 5.2mOhm, 80a, LL
OptiMOS Power MOSFET, 30v, D2PAK, RDSon = 5.2mOhm, 80a, LL
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| File Size |
449.26K /
8 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STB80NF03L-04
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| OCR Text |
30v - 0.0035 w - 80a to-262/to-263 stripfet ? power mosfet preliminary data n typical r ds(on) = 0.0035 w n exceptional dv/dt capability n 100% avalanche tested n low threshold drive n through-hole i2pak (to-262) power package in tube (suf... |
| Description |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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| File Size |
125.16K /
7 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPB80N06S2-07 SPP80N06S2-07 SPI80N06S2-07
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| OCR Text |
...1100 320 24 56 91 54 ns
VDD =30v, VGS =10V, ID =80a, RG =3.3
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18 35 86 4.9
24 53 110 -
nC
V(plateau) VDD =44V, ID =80a
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inver... |
| Description |
80 A, 55 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
OptiMOS Power-Transistor 的OptiMOS功率晶体
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| File Size |
418.58K /
8 Page |
View
it Online |
Download Datasheet |
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