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INTERSIL[Intersil Corporation]
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Part No. |
FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R1 FSJ163R3 FSJ260R3 FSJ260R4 FSJ160R3 FSJ160R4
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OCR Text |
...37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V) -20 -5 -10 -15 -20 (NOTE 6) MAXIMUM VDS BIAS (V) 130 130 104 78 52
Typical Performance Curves
Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE = 43 LET = 37MeV/mg... |
Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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File Size |
56.45K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRHE57133SE JANSR2N7500U5 IRHE57133SE-15
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OCR Text |
... refer to the last page 9.0 6.0 36 25 0.2 20 56 9.0 2.5 6.6 -55 to 150 300 (for 5s) 0.42 (Typical)
Pre-Irradiation
Units A
W
W/C
V ...130V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12... |
Description |
Simple Drive Requirements RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
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File Size |
173.19K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRHF57133SE JANSR2N7497T2
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OCR Text |
...
Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39....130V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
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File Size |
178.28K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRHMS57163SE JANSR2N7475T1
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OCR Text |
...Irradiation
Min
130 -- -- 2.5 36 -- -- -- -- -- -- -- -- -- -- -- --
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)...130V, TJ 150C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, cond... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
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File Size |
194.67K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRHNJ57133SE JANSR2N7485U3
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OCR Text |
...
Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39....130V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12... |
Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
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File Size |
174.78K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRHY57133CMSE JANSR2N7488T3 IRHY57133CMSE-15
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OCR Text |
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Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39....130V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12... |
Description |
Simple Drive Requirements RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
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File Size |
172.08K /
8 Page |
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International Rectifier, Corp. Integrated Device Technology, Inc. IRF[International Rectifier]
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Part No. |
IRHYK57133CMSE IRHYK57133CMSEPBF
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OCR Text |
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Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39....130V, TJ 150C 12 volt V GS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, con... |
Description |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
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File Size |
187.12K /
8 Page |
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