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Dynex Semiconductor, Ltd.
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Part No. |
DFM1200FXM18-A
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OCR Text |
... recovery diode module ds5420-1.5 april 2001 key parameters v rrm 1800v v f (typ) 2.0v i f (max) 1200a i fm (max) 2400a fig. 1 dual diode circuit diagram fig. 2 electrical connections - (not to scale) outline type code: f (see package deta... |
Description |
Fast Recovery Diode Modules - Dual Diode 快恢复二极管模块-双二极管
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File Size |
114.27K /
7 Page |
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it Online |
Download Datasheet |
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Infineon Technologies AG
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Part No. |
FS25R12W1T4
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OCR Text |
...e i?=0,80ma,v??=v??,ty?=25c v?? 5,0 5,8 6,5 v gateladung gatecharge v??=15v...+15v q? 0,20 c internergatewiderstand internalgateresistor t...1200a/s(ty?=150c) r?=20a e 1,90 2,65 2,90 mj mj mj ty?=25c ty?=125c ty?=150c abschaltverlustenergi... |
Description |
EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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File Size |
440.86K /
9 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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Part No. |
CM1200HA-34H
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OCR Text |
... c e c e cm e c g 20 114 130 16.5 2.5 18.5 18 61.5 14.5 11 35 5 30 140 5 38 28 31.5 4 - m8 nuts 3 - m4 nuts 124 0.25 57 0.25 57 0.25 6 - ...1200a, v ge = 15v v cc = 850v, i c = 1200a v ge1 = v ge2 = 15v r g = 1.6 ? resistive load swit... |
Description |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
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File Size |
50.98K /
4 Page |
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it Online |
Download Datasheet |
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Electronic Theatre Controls, Inc.
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Part No. |
2MBI1200UG-170
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OCR Text |
...mendable value : mounting 4.25~5.75 nm (m6) main terminals 8~10 nm (m8) sense terminals 1.8~2.1 nm (m4) 4. electrical characteristics ...1200a vge=15v,tj=125c - cies tj=125c vf (main terminal) 0.40 - - tf trr - vf (sense terminal) tj= 25... |
Description |
IGBT MODULE
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File Size |
465.98K /
13 Page |
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it Online |
Download Datasheet |
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Price and Availability
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