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    DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45
OCR Text 5.1 DS4241-6.0 July 2001 FEATURES s Double Side Cooling s High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 4800V 529...2500 Measured under pulse conditions Tj = 125C 2000 d.c. Half wave 2000 Instantaneous on-st...
Description Phase Control Thyristor

File Size 108.66K  /  8 Page

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    DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25

Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text ...ure range Clamping force -55 11.5 175 200 13.5 o Min. dc Anode dc - Max. 0.032 0.064 0.064 0.008 0.016 185 Units o C/W o ...2500 Measured under pulse conditions 4000 2000 Instantaneous forward current, IF - (A) 3000 Me...
Description Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE

File Size 94.85K  /  7 Page

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    DS1107SG37 DS1107SG39 DS1107SG40 DS1107SG38 DS1107SG36 DS1107SG35 DS1107SG

DYNEX SEMICONDUCTOR LTD
DYNEX[Dynex Semiconductor]
Part No. DS1107SG37 DS1107SG39 DS1107SG40 DS1107SG38 DS1107SG36 DS1107SG35 DS1107SG
OCR Text ...ure range Clamping force -55 11.5 150 175 13.5 o Min. dc Anode dc - Max. 0.032 0.064 0.064 0.008 0.016 160 Units o C/W o ...2500 2500 Measured under pulse conditions dc Half wave 2000 2000 3 phase Mean power di...
Description Rectifier Diode

File Size 96.08K  /  7 Page

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    DS1109SG47 DS1109SG46 DS1109SG50 DS1109SG DS1109SG45 DS1109SG48 DS1109SG49

DYNEX[Dynex Semiconductor]
Part No. DS1109SG47 DS1109SG46 DS1109SG50 DS1109SG DS1109SG45 DS1109SG48 DS1109SG49
OCR Text ...oC VR = 0 Max. 9.2 422 x 103 11.5 660 x 103 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cool...2500 2500 Measured under pulse conditions dc Half wave 2000 2000 3 phase Instanta...
Description Rectifier Diode

File Size 96.53K  /  7 Page

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    DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60

DYNEX[Dynex Semiconductor]
Part No. DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60
OCR Text 5.0 August 2001 FEATURES s Double Side Cooling s High Surge Capability KEY PARAMETERS VRRM 6000V IF(AV) 811A IFSM 10500A APPLICATI...2500 2500 Measured under pulse conditions dc Half wave Instantaneous forward current, IF -...
Description Rectifier Diode

File Size 94.33K  /  7 Page

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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ...hottky diode. Features * 11.5 A, 30 V. RDS(ON) = 0.011 @ VGS = 10 V RDS(ON) = 0.016 @ VGS = 4.5 V * * * Includes SyncFET Schottk...2500 units FDS6680S Rev B (W) FDS6680S Electrical Characteristics Symbol BVDSS BVDSS TJ IDS...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ... D uty cycle : 50 % T J = 12 5 C T sink = 90 C G a te d rive a s spe cified P ow er D is s ipation = 170 W S q u a re w a v e : 50 60% of rated v oltage I 25 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig....
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ... V GE = 15V 80s PULSE WIDTH 1.5 2.0 2.5 3.0 1 4.0 V CE = 25V 80s PULSE WIDTH 5.0 6.0 7.0 8.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typi...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...= 125 C TJ = 25 C 10 10 1.5 V = 15V 80s PULSE WIDTH GE 2.0 2.5 3.0 1 4.0 V = 25V 80s PULSE WIDTH CE 5.0 6.0 7.0 8.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...URRENT (A) D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 83 W S q u a re w a v e : 60 % of ra ted vo ltag e I 100 f, Frequency (KHz) Fig. 1 - Typical Load...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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