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ADPOW[Advanced Power Technology]
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| Part No. |
APT40M70JVR
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| OCR Text |
53A 0.070
S G D S
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Powe... |
| Description |
POWER MOS V 400V 53A 0.070 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
69.34K /
4 Page |
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it Online |
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ANALOGICTECH[Advanced Analogic Technologies]
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| Part No. |
AAT4285IJS-3-T1 AAT4285
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| OCR Text |
...07m and TA = 25C, IOUT(MAX) = 1.53A. If the output load current were to exceed 1.53A or if the ambient temperature were to increase, the internal die temperature would increase, and the device would be damaged. Higher peak currents can be o... |
| Description |
12V Slew Rate Controlled Load Switch
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| File Size |
300.86K /
11 Page |
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it Online |
Download Datasheet |
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MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
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| Part No. |
APT40M70JVFR
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| OCR Text |
53A 0.070
S G D S
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistan... |
| Description |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
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| File Size |
66.79K /
4 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BSP297
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| OCR Text |
...ate resistance
V GS=4.5V, ID=0.53A
Drain-source on-state resistance
V GS=10V, ID=0.66A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Pa... |
| Description |
SIPMOS Small-Signal-Transistor
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| File Size |
187.50K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF85N06
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| OCR Text |
...
TM
Features
* * * * * * * 53A, 60V, RDS(on) = 0.010 @VGS = 10 V Low gate charge ( typical 86 nC) Low Crss ( typical 165 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating
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| Description |
60V N-Channel MOSFET
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| File Size |
663.82K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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